<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Sun, Y. Y.</style></author><author><style face="normal" font="default" size="100%">Ruan, W. Y.</style></author><author><style face="normal" font="default" size="100%">Gao, X. F.</style></author><author><style face="normal" font="default" size="100%">Bang, J.</style></author><author><style face="normal" font="default" size="100%">Kim, Y. H.</style></author><author><style face="normal" font="default" size="100%">Lee, K.</style></author><author><style face="normal" font="default" size="100%">West, D.</style></author><author><style face="normal" font="default" size="100%">Liu, X.</style></author><author><style face="normal" font="default" size="100%">Chan, T. L.</style></author><author><style face="normal" font="default" size="100%">Chou, M. Y.</style></author><author><style face="normal" font="default" size="100%">Zhang, S. B.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Phase diagram of graphene nanoribbons and band-gap bifurcation of Dirac fermions under quantum confinement</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Review B</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">CARBON NANOTUBES</style></keyword><keyword><style  face="normal" font="default" size="100%">edges</style></keyword><keyword><style  face="normal" font="default" size="100%">fabrication</style></keyword><keyword><style  face="normal" font="default" size="100%">PHYSICS</style></keyword><keyword><style  face="normal" font="default" size="100%">SEMICONDUCTORS</style></keyword><keyword><style  face="normal" font="default" size="100%">STABILITY</style></keyword><keyword><style  face="normal" font="default" size="100%">zigzag</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2012</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:000304648700004</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">19</style></number><volume><style face="normal" font="default" size="100%">85</style></volume><pages><style face="normal" font="default" size="100%">5</style></pages><isbn><style face="normal" font="default" size="100%">1098-0121</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;A p-T phase diagram of graphene nanoribbons (GNRs) terminated by hydrogen atoms is established based on first-principles calculations, where the stable phase at standard conditions (25 degrees C and 1 bar) is found to be a zigzag GNR (zzGNR). The stability of this new GNR is understood based on an electron-counting model, which predicts semiconducting nonmagnetic zzGNRs. Quantum confinement of Dirac fermions in the stable zzGNRs is found to be qualitatively different from that in ordinary semiconductors. Bifurcation of the band gap is predicted to take place, leading to the formation of polymorphs with distinct band gaps but equal thermodynamic stability. A tight-binding model analysis reveals the role of edge symmetry on the band-gap bifurcation.&lt;/p&gt;
</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><accession-num><style face="normal" font="default" size="100%">WOS:000304648700004</style></accession-num><notes><style face="normal" font="default" size="100%">&lt;p&gt;ISI Document Delivery No.: 950KSTimes Cited: 1Cited Reference Count: 34Cited References:      Bai JW, 2009, NANO LETT, V9, P2083, DOI 10.1021/nl900531n     Barone V, 2006, NANO LETT, V6, P2748, DOI 10.1021/nl0617033     Cai JM, 2010, NATURE, V466, P470, DOI 10.1038/nature09211     Elias AL, 2010, NANO LETT, V10, P366, DOI 10.1021/nl901631z     Gallagher P, 2010, PHYS REV B, V81, DOI 10.1103/PhysRevB.81.115409     Geim AK, 2007, NAT MATER, V6, P183, DOI 10.1038/nmat1849     Girit CO, 2009, SCIENCE, V323, P1705, DOI 10.1126/science.1166999     Han MY, 2010, PHYS REV LETT, V104, DOI 10.1103/PhysRevLett.104.056801     Han MY, 2007, PHYS REV LETT, V98, DOI 10.1103/PhysRevLett.98.206805     Hou ZF, 2011, J PHYS CHEM C, V115, P5392, DOI 10.1021/jp110879d     Jia XT, 2009, SCIENCE, V323, P1701, DOI 10.1126/science.1166862     Jiao LY, 2010, NAT NANOTECHNOL, V5, P321, DOI [10.1038/nnano.2010.54, 10.1038/NNANO.2010.54]     Jiao LY, 2009, NATURE, V458, P877, DOI 10.1038/nature07919     Kosynkin DV, 2009, NATURE, V458, P872, DOI 10.1038/nature07872     Krauss B, 2010, NANO LETT, V10, P4544, DOI 10.1021/nl102526s     Kresse G, 1996, COMP MATER SCI, V6, P15, DOI 10.1016/0927-0256(96)00008-0     Kresse G, 1999, PHYS REV B, V59, P1758, DOI 10.1103/PhysRevB.59.1758     Li XL, 2008, SCIENCE, V319, P1229, DOI 10.1126/science.1150878     Liao L, 2010, NANO LETT, V10, P1917, DOI 10.1021/nl100840z     Martin I, 2009, PHYS REV B, V79, DOI 10.1103/PhysRevB.79.235132     Nakada K, 1996, PHYS REV B, V54, P17954, DOI 10.1103/PhysRevB.54.17954     Novoselov KS, 2004, SCIENCE, V306, P666, DOI 10.1126/science.1102896     Perdew JP, 1996, PHYS REV LETT, V77, P3865, DOI 10.1103/PhysRevLett.77.3865     Querlioz D, 2008, APPL PHYS LETT, V92, DOI 10.1063/1.2838354     Reuter K, 2002, PHYS REV B, V65, DOI 10.1103/PhysRevB.65.035406     Ritter KA, 2009, NAT MATER, V8, P235, DOI [10.1038/nmat2378, 10.1038/NMAT2378]     Son YW, 2006, PHYS REV LETT, V97, DOI 10.1103/PhysRevLett.97.216803     Stampfer C, 2009, PHYS REV LETT, V102, DOI 10.1103/PhysRevLett.102.056403     Wakabayashi K, 2007, PHYS REV LETT, V99, DOI 10.1103/PhysRevLett.99.036601     Wang XR, 2008, PHYS REV LETT, V100, DOI 10.1103/PhysRevLett.100.206803     Warner JH, 2009, NAT NANOTECHNOL, V4, P500, DOI [10.1038/nnano.2009.194, 10.1038/NNANO.2009.194]     Wassmann T, 2008, PHYS REV LETT, V101, DOI 10.1103/PhysRevLett.101.096402     Yang L, 2007, PHYS REV LETT, V99, DOI 10.1103/PhysRevLett.99.186801     Yoon Y, 2007, APPL PHYS LETT, V91, DOI 10.1063/1.2769764Sun, Y. Y. Ruan, W. Y. Gao, Xingfa Bang, Junhyeok Kim, Yong-Hyun Lee, Kyuho West, D. Liu, Xin Chan, T-L. Chou, M. Y. Zhang, S. B.Kim, Yong-Hyun/C-2045-2011; Lee, Kyuho/B-9370-2008; West, Damien/F-8616-2012; Liu, Xin/G-3303-2012; Chou, Mei-Yin/D-3898-2012; Krausnick, Jennifer/D-6291-2013; Zhang, Shengbai/D-4885-2013Lee, Kyuho/0000-0001-9325-3717; Liu, Xin/0000-0002-4422-4108;US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DEFG02-97ER45632]; NSF [DMR-1104994]; DOE [DE-SC0002623]; China MOST [2012CB934001]; NERSC under US DOE [DE-AC02-05CH11231]W.Y.R. and M.Y.C. acknowledge support from the US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under Award No. DEFG02-97ER45632. The work at RPI was supported by the NSF (Grant No. DMR-1104994) and the DOE (Grant No. DE-SC0002623). X. G. was partially supported by the China MOST 973 program (Grant No. 2012CB934001). The supercomputer time was provided by NERSC under US DOE Grant No. DE-AC02-05CH11231 and CCNI at RPI.1Amer physical socCollege pk&lt;/p&gt;
</style></notes><custom7><style face="normal" font="default" size="100%">195464</style></custom7><auth-address><style face="normal" font="default" size="100%">Rensselaer Polytech Inst, Dept Phys Appl Phys &amp; Astron, Troy, NY 12180 USA. Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA. Korea Adv Inst Sci &amp; Technol, Grad Sch Nanosci &amp; Technol WCU, Taejon 305701, South Korea. Korea Adv Inst Sci &amp; Technol, KAIST Inst NanoCentury, Taejon 305701, South Korea. Rutgers State Univ, Dept Phys &amp; Astron, Piscataway, NJ 08854 USA. Acad Sinica, Inst Atom &amp; Mol Sci, Taipei 10617, Taiwan.Sun, YY (reprint author), Rensselaer Polytech Inst, Dept Phys Appl Phys &amp; Astron, Troy, NY 12180 USA.meiyin.chou@physics.gatech.edu|zhangs9@rpi.edu</style></auth-address></record></records></xml>