<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Yang, L.</style></author><author><style face="normal" font="default" size="100%">Musin, R. N.</style></author><author><style face="normal" font="default" size="100%">Wang, X. Q.</style></author><author><style face="normal" font="default" size="100%">Chou, M. Y.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Quantum confinement effect in Si/Ge core-shell nanowires: First-principles calculations</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Review B</style></secondary-title><alt-title><style face="normal" font="default" size="100%">Phys. Rev. B</style></alt-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">FIELD-EFFECT TRANSISTORS</style></keyword><keyword><style  face="normal" font="default" size="100%">GROWTH</style></keyword><keyword><style  face="normal" font="default" size="100%">HETEROSTRUCTURES</style></keyword><keyword><style  face="normal" font="default" size="100%">SEMICONDUCTORS</style></keyword><keyword><style  face="normal" font="default" size="100%">TOTAL-ENERGY CALCULATIONS</style></keyword><keyword><style  face="normal" font="default" size="100%">WAVE BASIS-SET</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2008</style></year><pub-dates><date><style  face="normal" font="default" size="100%">May</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:000256971600104</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">19</style></number><volume><style face="normal" font="default" size="100%">77</style></volume><pages><style face="normal" font="default" size="100%">5</style></pages><isbn><style face="normal" font="default" size="100%">1098-0121</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The electronic structure of Si/Ge core-shell nanowires along the [110] and [111] directions are studied with first-principles calculations. We identify the near-gap electronic states that are spatially separated within the core or the shell region, making it possible for a dopant to generate carriers in a different region. The confinement energies of these core and shell states provide an operational definition of the &quot;band offset,&quot; which is not only size dependent but also component dependent. The optimal doping strategy in Si/Ge core-shell nanowires is proposed based on these energy results.&lt;/p&gt;
</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><accession-num><style face="normal" font="default" size="100%">WOS:000256971600104</style></accession-num><notes><style face="normal" font="default" size="100%">&lt;p&gt;ISI Document Delivery No.: 316TCTimes Cited: 24Cited Reference Count: 24Cited References:      Yan JA, 2007, PHYS REV B, V76, DOI 10.1103/PhysRevB.76.115319     Bruno M, 2007, PHYS REV LETT, V98     Vo T, 2006, PHYS REV B, V74, DOI 10.1103/PhysRevB.74.045116     Xiang J, 2006, NATURE, V441, P489, DOI 10.1038/nature04796     Bruno M, 2005, PHYS REV B, V72, DOI 10.1103/PhysRevB.72.153310     Noborisaka J, 2005, APPL PHYS LETT, V87, DOI 10.1063/1.2035332     Lu W, 2005, P NATL ACAD SCI USA, V102, P10046, DOI 10.1073/pnas.0504581102     Glazov MM, 2005, PHYS REV B, V71, DOI 10.1103/PhysRevB.71.155313     Musin RN, 2005, PHYS REV B, V71, DOI 10.1103/PhysRevB.71.155318     Rurali R, 2005, PHYS REV LETT, V94, DOI 10.1103/PhysRevLett.94.026805     Zhao XY, 2004, PHYS REV LETT, V92, DOI 10.1103/PhysRevLett.92.236805     Greytak AB, 2004, APPL PHYS LETT, V84, P4176, DOI 10.1063/1.1755846     Cui Y, 2003, NANO LETT, V3, P149, DOI 10.1021/nl025875l     Lauhon LJ, 2002, NATURE, V420, P57, DOI 10.1038/nature01141     Bjork MT, 2002, APPL PHYS LETT, V80, P1058     Gudiksen MS, 2002, NATURE, V415, P617, DOI 10.1038/415617a     Duan XF, 2001, NATURE, V409, P66, DOI 10.1038/35051047     Chang CL, 1998, APPL PHYS LETT, V73, P3568, DOI 10.1063/1.122809     Schaffler F, 1997, SEMICOND SCI TECH, V12, P1515, DOI 10.1088/0268-1242/12/12/001     Kresse G, 1996, PHYS REV B, V54, P11169, DOI 10.1103/PhysRevB.54.11169     Kresse G, 1996, COMP MATER SCI, V6, P15, DOI 10.1016/0927-0256(96)00008-0     TSERBAK C, 1995, SEMICOND SCI TECH, V10, P1604, DOI 10.1088/0268-1242/10/12/008     HYBERTSEN MS, 1986, PHYS REV B, V34, P5390, DOI 10.1103/PhysRevB.34.5390     VANDEWALLE CG, 1986, PHYS REV B, V34, P5621, DOI 10.1103/PhysRevB.34.5621Yang, Li Musin, Ryza N. Wang, Xiao-Qian Chou, M. Y.AMER PHYSICAL SOCCOLLEGE PK&lt;/p&gt;
</style></notes><auth-address><style face="normal" font="default" size="100%">[Yang, L|Chou, MY] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA. [Musin, RN|Wang, XQ] Clark Atlanta Univ, Dept Phys, Atlanta, GA 30314 USA. [Musin, RN|Wang, XQ] Clark Atlanta Univ, Ctr Funct Nanoscale Mat, Atlanta, GA 30314 USA.Yang, L (reprint author), Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA</style></auth-address></record></records></xml>