<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Yan, J. A.</style></author><author><style face="normal" font="default" size="100%">Yang, L.</style></author><author><style face="normal" font="default" size="100%">Chou, M. Y.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Size and orientation dependence in the electronic properties of silicon nanowires</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Review B</style></secondary-title><alt-title><style face="normal" font="default" size="100%">Phys. Rev. B</style></alt-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">1ST-PRINCIPLES</style></keyword><keyword><style  face="normal" font="default" size="100%">absorption-spectra</style></keyword><keyword><style  face="normal" font="default" size="100%">BAND-GAPS</style></keyword><keyword><style  face="normal" font="default" size="100%">BUILDING-BLOCKS</style></keyword><keyword><style  face="normal" font="default" size="100%">CONFINEMENT</style></keyword><keyword><style  face="normal" font="default" size="100%">OPTICAL-PROPERTIES</style></keyword><keyword><style  face="normal" font="default" size="100%">POROUS SILICON</style></keyword><keyword><style  face="normal" font="default" size="100%">QUANTUM</style></keyword><keyword><style  face="normal" font="default" size="100%">QUASI-PARTICLE ENERGIES</style></keyword><keyword><style  face="normal" font="default" size="100%">SEMICONDUCTOR NANOWIRES</style></keyword><keyword><style  face="normal" font="default" size="100%">WIRES</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2007</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Sep</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:000249786400073</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">11</style></number><volume><style face="normal" font="default" size="100%">76</style></volume><pages><style face="normal" font="default" size="100%">6</style></pages><isbn><style face="normal" font="default" size="100%">1098-0121</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;By using first-principles pseudopotential methods, we have studied the electronic properties of hydrogen-passivated silicon nanowires along the [100], [110], and [111] directions with diameter up to 3.4 nm. It is found that as the diameter decreases, the energy band gaps are distinctly enlarged due to the confinement effect. The valence-band maximum moves down while the conduction-band minimum moves up compared with the bulk. By using the many-body perturbation theory within the GW approximation, we have also investigated the self-energy correction to the energy band gaps. Our calculational results show that, although the band gap values strongly depend on both the diameter and orientation, the GW corrections are mainly dependent on diameter and less sensitive to the growth orientation. The effective mass as a function of diameter is also discussed.&lt;/p&gt;
</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><accession-num><style face="normal" font="default" size="100%">WOS:000249786400073</style></accession-num><notes><style face="normal" font="default" size="100%">&lt;p&gt;ISI Document Delivery No.: 215CRTimes Cited: 40Cited Reference Count: 37Cited References:      Bruno M, 2007, PHYS REV LETT, V98     Cao JX, 2006, PHYS REV LETT, V97, DOI 10.1103/PhysRevLett.97.136105     Li J, 2006, PHYS REV B, V74, DOI 10.1103/PhysRevB.74.075333     Vo T, 2006, PHYS REV B, V74, DOI 10.1103/PhysRevB.74.045116     Rozzi CA, 2006, PHYS REV B, V73, DOI 10.1103/PhysRevB.73.205119     Sirbuly DJ, 2005, J PHYS CHEM B, V109, P15190, DOI 10.1021/jp051813i     Wang J, 2005, IEEE T ELECTRON DEV, V52, P1589, DOI 10.1109/TED.2005.850945     Friedman RS, 2005, NATURE, V434, P1085, DOI 10.1038/4341085a     Wang J, 2005, APPL PHYS LETT, V86, DOI 10.1063/1.1873055     Rurali R, 2005, PHYS REV LETT, V94, DOI 10.1103/PhysRevLett.94.026805     Zhao XY, 2004, PHYS REV LETT, V92, DOI 10.1103/PhysRevLett.92.236805     Spataru CD, 2004, APPL PHYS A-MATER, V78, P1129, DOI 10.1007/s00339-003-2464-2     Wu Y, 2004, NANO LETT, V4, P433, DOI 10.1021/nl035162i     Ma DDD, 2003, SCIENCE, V299, P1874, DOI 10.1126/science.1080313     Cui Y, 2003, NANO LETT, V3, P149, DOI 10.1021/nl025875l     Katz D, 2002, PHYS REV LETT, V89     Huang Y, 2001, SCIENCE, V294, P1313, DOI 10.1126/science.1066192     Cui Y, 2001, SCIENCE, V293, P1289, DOI 10.1126/science.1062711     Huang MH, 2001, SCIENCE, V292, P1897, DOI 10.1126/science.1060367     Cui Y, 2001, APPL PHYS LETT, V78, P2214, DOI 10.1063/1.1363692     Cui Y, 2001, SCIENCE, V291, P851, DOI 10.1126/science.291.5505.851     Duan XF, 2001, NATURE, V409, P66, DOI 10.1038/35051047     Rohlfing M, 2000, PHYS REV B, V62, P4927, DOI 10.1103/PhysRevB.62.4927     Duan XF, 2000, APPL PHYS LETT, V76, P1116, DOI 10.1063/1.125956     HOLMES JD, 2000, SCIENCE, V287, P1472     Morales AM, 1998, SCIENCE, V279, P208, DOI 10.1126/science.279.5348.208     DELLEY B, 1995, APPL PHYS LETT, V67, P2370, DOI 10.1063/1.114348     ONIDA G, 1995, PHYS REV LETT, V75, P818, DOI 10.1103/PhysRevLett.75.818     YEH CY, 1994, PHYS REV B, V50, P14405, DOI 10.1103/PhysRevB.50.14405     DELERUE C, 1993, PHYS REV B, V48, P11024, DOI 10.1103/PhysRevB.48.11024     HYBERTSEN MS, 1993, PHYS REV B, V48, P4608, DOI 10.1103/PhysRevB.48.4608     BUDA F, 1992, PHYS REV LETT, V69, P1272, DOI 10.1103/PhysRevLett.69.1272     READ AJ, 1992, PHYS REV LETT, V69, P1232, DOI 10.1103/PhysRevLett.69.1232     TROULLIER N, 1991, PHYS REV B, V43, P1993, DOI 10.1103/PhysRevB.43.1993     CANHAM LT, 1990, APPL PHYS LETT, V57, P1046, DOI 10.1063/1.103561     HYBERTSEN MS, 1986, PHYS REV B, V34, P5390, DOI 10.1103/PhysRevB.34.5390     DILLON JA, 1958, J APPL PHYS, V29, P1195, DOI 10.1063/1.1723401Yan, Jia-An Yang, Li Chou, M. Y.AMER PHYSICAL SOCCOLLEGE PK&lt;/p&gt;
</style></notes><auth-address><style face="normal" font="default" size="100%">Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA.Yan, JA (reprint author), Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA</style></auth-address></record></records></xml>