<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Yvon, K.</style></author><author><style face="normal" font="default" size="100%">Renaudin, G.</style></author><author><style face="normal" font="default" size="100%">Wei, C. M.</style></author><author><style face="normal" font="default" size="100%">Chou, M. Y.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Hydrogenation-induced insulating state in the intermetallic compound LaMg2Ni</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Review Letters</style></secondary-title><alt-title><style face="normal" font="default" size="100%">Phys. Rev. Lett.</style></alt-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">COMPLEXES</style></keyword><keyword><style  face="normal" font="default" size="100%">ELECTRONIC-STRUCTURE</style></keyword><keyword><style  face="normal" font="default" size="100%">FILMS</style></keyword><keyword><style  face="normal" font="default" size="100%">METAL HYDRIDE</style></keyword><keyword><style  face="normal" font="default" size="100%">MG</style></keyword><keyword><style  face="normal" font="default" size="100%">STORAGE</style></keyword><keyword><style  face="normal" font="default" size="100%">SWITCHABLE OPTICAL-PROPERTIES</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2005</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Feb</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:000227140400052</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">6</style></number><volume><style face="normal" font="default" size="100%">94</style></volume><pages><style face="normal" font="default" size="100%">4</style></pages><isbn><style face="normal" font="default" size="100%">0031-9007</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Hydrogenation-induced metal-semiconductor transitions usually occur in simple systems based on rare earths and/or magnesium, accompanied by major reconstructions of the metal host (atom shifts &amp;gt;2 Angstrom). We report on the first such transition in a quaternary system based on a transition element. Metallic LaMg2Ni absorbs hydrogen near ambient conditions, forming the nonmetallic hydride LaMg2NiH7 which has a nearly unchanged metal host structure (atom shifts &amp;lt;0.7 Angstrom). The transition is induced by a charge transfer of conduction electrons into tetrahedral [NiH4](4-) complexes having closed-shell electron configurations.&lt;/p&gt;
</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><accession-num><style face="normal" font="default" size="100%">WOS:000227140400052</style></accession-num><notes><style face="normal" font="default" size="100%">&lt;p&gt;ISI Document Delivery No.: 899JJTimes Cited: 21Cited Reference Count: 17Cited References:      YVON K, 2004, ENCY MAT SCI TECHNOL, P1     Alford JA, 2003, PHYS REV B, V67     Renaudin G, 2003, J ALLOY COMPD, V350, P145, DOI 10.1016/S0925-8388(02)00963-5     Bowman RC, 2002, MRS BULL, V27, P688, DOI 10.1557/mrs2002.223     Cerny R, 2002, J ALLOY COMPD, V340, P180, DOI 10.1016/S0925-8388(02)00050-6     Isidorsson J, 2002, APPL PHYS LETT, V80, P2305, DOI 10.1063/1.1463205     Richardson TJ, 2002, APPL PHYS LETT, V80, P1349, DOI 10.1063/1.1454218     Schlapbach L, 2001, NATURE, V414, P353, DOI 10.1038/35104634     GRIESSEN R, 2001, EUROPHYS NEWS, V32, P41, DOI 10.1051/epn:2001201     Ng KK, 1997, PHYS REV LETT, V78, P1311, DOI 10.1103/PhysRevLett.78.1311     Kresse G, 1996, COMP MATER SCI, V6, P15, DOI 10.1016/0927-0256(96)00008-0     Huiberts JN, 1996, NATURE, V380, P231, DOI 10.1038/380231a0     VAJDA P, 1995, HDB PHYSICS CHEM RAR, V20, P207, DOI 10.1016/S0168-1273(05)80071-6     KRESSE G, 1994, PHYS REV B, V49, P14251, DOI 10.1103/PhysRevB.49.14251     ORGAZ E, 1993, Z PHYS CHEM, V181, P1     REANUDIN C, IN PRESS     YVON K, IN PRESS ENCY INORGAYvon, K Renaudin, G Wei, CM Chou, MYAMERICAN PHYSICAL SOCCOLLEGE PK&lt;/p&gt;
</style></notes><auth-address><style face="normal" font="default" size="100%">Univ Geneva, Lab Cristallog, CH-1211 Geneva 4, Switzerland. Acad Sinica, Inst Phys, Taipei 11529, Taiwan. Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA.Yvon, K (reprint author), Univ Geneva, Lab Cristallog, CH-1211 Geneva 4, Switzerland</style></auth-address></record></records></xml>