<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mercer, J. L.</style></author><author><style face="normal" font="default" size="100%">Chou, M. Y.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">TIGHT-BINDING STUDY OF THE ELECTRONIC-STRUCTURE OF AMORPHOUS-SILICON</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Review B</style></secondary-title><alt-title><style face="normal" font="default" size="100%">Phys. Rev. B</style></alt-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">DANGLING BONDS</style></keyword><keyword><style  face="normal" font="default" size="100%">DEFECTS</style></keyword><keyword><style  face="normal" font="default" size="100%">ENERGETICS</style></keyword><keyword><style  face="normal" font="default" size="100%">FLOATING BONDS</style></keyword><keyword><style  face="normal" font="default" size="100%">MOLECULAR-DYNAMICS SIMULATIONS</style></keyword><keyword><style  face="normal" font="default" size="100%">SI</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">1991</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Mar</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:A1991FC70400060</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">8</style></number><volume><style face="normal" font="default" size="100%">43</style></volume><pages><style face="normal" font="default" size="100%">6768-6771</style></pages><isbn><style face="normal" font="default" size="100%">0163-1829</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;We have performed tight-binding calculations on a model of an amorphous silicon sample generated previously by a molecular-dynamics simulation employing the Stillinger-Weber potential. The sample consists of 588 atoms and contains a high density of floating-bond defects. Two tight-binding calculations are presented, one using the widely accepted Chadi parameters, which include only nearest-neighbor interactions, and the other using the parameters recently proposed by Allen, Broughton, and McMahan (ABM) [Phys. Rev. B 34, 859 (1986)] for a nonorthogonal basis set. Comparison of the densities of states shows similar behavior in the valence band, but the electron density near a defect is less localized with the ABM parameters. It is also found that the projected density of states on the fivefold-coordinated atoms is very close to that on the fourfold-coordinated atoms, while the projected density of states on the threefold-coordinated atoms is distinctly different and has more states in the gap.&lt;/p&gt;
</style></abstract><work-type><style face="normal" font="default" size="100%">Note</style></work-type><accession-num><style face="normal" font="default" size="100%">WOS:A1991FC70400060</style></accession-num><notes><style face="normal" font="default" size="100%">&lt;p&gt;ISI Document Delivery No.: FC704Times Cited: 17Cited Reference Count: 23Cited References:      BISWAS R, 1989, PHYS REV LETT, V63, P1491, DOI 10.1103/PhysRevLett.63.1491     LUEDTKE WD, 1989, PHYS REV B, V40, P1164, DOI 10.1103/PhysRevB.40.1164     STATHIS JH, 1989, PHYS REV B, V40, P1232, DOI 10.1103/PhysRevB.40.1232     MARTINMORENO L, 1989, PHYS REV B, V39, P3445, DOI 10.1103/PhysRevB.39.3445     FEDDERS PA, 1989, PHYS REV B, V39, P1134, DOI 10.1103/PhysRevB.39.1134     KELIRES PC, 1988, PHYS REV LETT, V61, P562, DOI 10.1103/PhysRevLett.61.562     FEDDERS PA, 1988, PHYS REV B, V37, P8506, DOI 10.1103/PhysRevB.37.8506     STUTZMANN M, 1988, PHYS REV LETT, V60, P1682, DOI 10.1103/PhysRevLett.60.1682     STATHIS JH, 1988, PHYS REV B, V37, P6579, DOI 10.1103/PhysRevB.37.6579     LUEDTKE WD, 1988, PHYS REV B, V37, P4656, DOI 10.1103/PhysRevB.37.4656     BISWAS R, 1987, PHYS REV B, V36, P7437, DOI 10.1103/PhysRevB.36.7437     KLUGE MD, 1987, PHYS REV B, V36, P4234, DOI 10.1103/PhysRevB.36.4234     PANTELIDES ST, 1987, PHYS REV B, V36, P3479, DOI 10.1103/PhysRevB.36.3479     BROUGHTON JQ, 1987, PHYS REV B, V35, P9120, DOI 10.1103/PhysRevB.35.9120     PANTELIDES ST, 1987, PHYS REV LETT, V58, P1344, DOI 10.1103/PhysRevLett.58.1344     FEDDERS PA, 1987, PHYS REV LETT, V58, P1156, DOI 10.1103/PhysRevLett.58.1156     PANTELIDES ST, 1986, PHYS REV LETT, V57, P2979, DOI 10.1103/PhysRevLett.57.2979     ALLEN PB, 1986, PHYS REV B, V34, P859, DOI 10.1103/PhysRevB.34.859     BIEGELSEN DK, 1986, PHYS REV B, V33, P3006, DOI 10.1103/PhysRevB.33.3006     JACKSON WB, 1985, J NON-CRYST SOLIDS, V77-8, P281, DOI 10.1016/0022-3093(85)90657-X     STILLINGER FH, 1985, PHYS REV B, V31, P5262, DOI 10.1103/PhysRevB.31.5262     CHADI DJ, 1979, J VAC SCI TECHNOL, V16, P1290, DOI 10.1116/1.570143     SLATER JC, 1954, PHYS REV, V94, P1498, DOI 10.1103/PhysRev.94.1498MERCER, JL CHOU, MYAMERICAN PHYSICAL SOCCOLLEGE PK&lt;/p&gt;
</style></notes><auth-address><style face="normal" font="default" size="100%">MERCER, JL (reprint author), GEORGIA INST TECHNOL,SCH PHYS,ATLANTA,GA 30332, USA</style></auth-address></record></records></xml>