@article {2986,
	title = {Large quantum-spin-Hall gap in single-layer 1T' WSe2},
	volume = {9},
	year = {2018},
	note = {n/a},
	month = {2018},
	pages = {2003},
	abstract = {<p>Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum-spin-Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe2 single layer with the 1T' structure that does not exist in the bulk form of WSe2. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observe a gap of 129 meV in the 1T' layer and an in-gap edge state located near the layer boundary. The system's 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with doping by Rb adsorption, ultimately leading to an insulator{\textendash}semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for developing advanced nanoscale systems and quantum devices.</p>
},
	isbn = {2041-1723},
	url = {https://doi.org/10.1038/s41467-018-04395-2},
	author = {P. Chen and Pai, Woei Wu and Chan, Y. -H. and Sun, W.-L. and Xu, C.-Z. and Lin, D.-S. and Chou, M. Y. and Fedorov, A. -V. and Chiang, T. -C.}
}
