@article {1456,
	title = {Optical phonon anomaly in Bernal stacked bilayer graphene with ultrahigh carrier densities},
	journal = {Physical Review B},
	volume = {86},
	number = {3},
	year = {2012},
	note = {<p>ISI Document Delivery No.: 969WDTimes Cited: 1Cited Reference Count: 38Cited References:      Ando T, 2006, J PHYS SOC JPN, V75, DOI [10.1143/JPSJ.75.054701, 10.1143/JPSJ.75.124701]     Ando T, 2007, J PHYS SOC JPN, V76, DOI 10.1143/JPSJ.76.104711     Ando T, 2011, PHYSICA E, V43, P645, DOI 10.1016/j.physe.2010.07.021     Attaccalite C, 2010, NANO LETT, V10, P1172, DOI 10.1021/nl9034626     Baroni S, 2001, REV MOD PHYS, V73, P515, DOI 10.1103/RevModPhys.73.515     Castro Neto AH, 2009, REV MOD PHYS, V81, P109, DOI 10.1103/RevModPhys.81.109     Chen CF, 2011, NATURE, V471, P617, DOI 10.1038/nature09866     Cho JH, 2008, ADV MATER, V20, P686, DOI 10.1002/adma.200701069     Das A, 2009, PHYS REV B, V79, DOI 10.1103/PhysRevB.79.155417     Efetov DK, 2011, PHYS REV B, V84, DOI 10.1103/PhysRevB.84.161412     Efetov DK, 2010, PHYS REV LETT, V105, DOI 10.1103/PhysRevLett.105.256805     Giannozzi P, 2009, J PHYS-CONDENS MAT, V21, DOI 10.1088/0953-8984/21/39/395502     Gruneis A, 2009, PHYS REV B, V79, DOI 10.1103/PhysRevB.79.205106     Kuzmenko AB, 2009, PHYS REV LETT, V103, DOI 10.1103/PhysRevLett.103.116804     Lazzeri M, 2006, PHYS REV LETT, V97, DOI 10.1103/PhysRevLett.97.266407     Lee B, 2010, NANO LETT, V10, P2427, DOI 10.1021/nl100587e     Li ZQ, 2009, PHYS REV LETT, V102, DOI 10.1103/PhysRevLett.102.037403     Mak KF, 2009, PHYS REV LETT, V102, DOI 10.1103/PhysRevLett.102.256405     Malard LM, 2008, PHYS REV LETT, V101, DOI 10.1103/PhysRevLett.101.257401     McChesney JL, 2010, PHYS REV LETT, V104, DOI 10.1103/PhysRevLett.104.136803     Nicol EJ, 2008, PHYS REV B, V77, DOI 10.1103/PhysRevB.77.155409     Park CH, 2008, NANO LETT, V8, P4229, DOI 10.1021/nl801884n     Park CH, 2007, PHYS REV LETT, V99, DOI 10.1103/PhysRevLett.99.086804     Pisana S, 2007, NAT MATER, V6, P198, DOI 10.1038/nmat1846     Piscanec S, 2004, PHYS REV LETT, V93, DOI 10.1103/PhysRevLett.93.185503     Stoller MD, 2008, NANO LETT, V8, P3498, DOI 10.1021/nl802558y     Tang TT, 2010, NAT NANOTECHNOL, V5, P32, DOI [10.1038/nnano.2009.334, 10.1038/NNANO.2009.334]     TROULLIER N, 1991, PHYS REV B, V43, P1993, DOI 10.1103/PhysRevB.43.1993     Valla T, 2009, PHYS REV LETT, V102, DOI 10.1103/PhysRevLett.102.107007     Yan J, 2008, PHYS REV LETT, V101, DOI 10.1103/PhysRevLett.101.136804     Yan JA, 2008, PHYS REV B, V77, DOI 10.1103/PhysRevB.77.125401     Yan JA, 2009, PHYS REV B, V79, DOI 10.1103/PhysRevB.79.115443     Yan JA, 2011, PHYS REV B, V83, DOI 10.1103/PhysRevB.83.245418     Yang L, 2009, PHYS REV LETT, V103, DOI 10.1103/PhysRevLett.103.186802     Ye JT, 2011, P NATL ACAD SCI USA, V108, P13002, DOI 10.1073/pnas.1018388108     Zhang LM, 2008, PHYS REV B, V78, DOI 10.1103/PhysRevB.78.235408     Zhang YB, 2009, NATURE, V459, P820, DOI 10.1038/nature08105     Zhao WJ, 2011, J AM CHEM SOC, V133, P5941, DOI 10.1021/ja110939aYan, Jia-An Varga, K. Chou, M. Y.Yan, Jia-An/F-8282-2010; Chou, Mei-Yin/D-3898-2012; Varga, Kalman/A-7102-2013Yan, Jia-An/0000-0002-3959-4091;US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DEFG02-97ER45632]; Office of Science of the US Department of Energy [DE-AC02-05CH11231]J.A.Y. is grateful to Z. Jiang, F. Giustino, C.-H. Park, W. Duan, F. Liu, and S. C. Zhang for fruitful discussions and thanks Mark A. Edwards for the support. Part of this work was performed at the Georgia Southern University in Statesboro, Georgia. M.Y.C. acknowledges support by the US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under Award No. DEFG02-97ER45632. This research used computational resources at the National Energy Research Scientific Computing Center (supported by the Office of Science of the US Department of Energy under Contract No. DE-AC02-05CH11231) and at the National Institute for Computational Sciences under an XSEDE startup allocation (Request No. DMR110111).1Amer physical socCollege pk</p>
},
	month = {Jul},
	pages = {5},
	type = {Article},
	abstract = {<p>Electron-phonon coupling (EPC) in Bernal stacked bilayer graphene (BLG) at different doping levels is studied by first-principles calculations. The phonons considered are long-wavelength high-energy symmetric and antisymmetric optical modes. Both are shown to have distinct EPC-induced phonon linewidths and frequency shifts as a function of the Fermi level E-F. We find that the antisymmetric mode has a strong coupling with the lowest two conduction bands when the Fermi level E-F is nearly 0.5 eV above the neutrality point, giving rise to a giant linewidth (more than 100 cm(-1)) and a significant frequency softening (similar to 60 cm(-1)). Our ab initio calculations show that the origin of the dramatic change arises from the unusual band structure in BLG. The results highlight the band structure effects on the EPC in BLG in the high-carrier-density regime.</p>
},
	keywords = {electronic-properties, fermi-level, GRAPHITE, PHYSICS},
	isbn = {1098-0121},
	url = {<Go to ISI>://WOS:000306089200020},
	author = {Yan, J. A. and Varga, K. and Chou, M. Y.}
}
