@article {1451,
	title = {Charge Transport through Graphene Junctions with Wetting Metal Leads},
	journal = {Nano Letters},
	volume = {12},
	number = {7},
	year = {2012},
	note = {<p>ISI Document Delivery No.: 972QYTimes Cited: 0Cited Reference Count: 37Cited References:      Artacho E, 2008, J PHYS-CONDENS MAT, V20, DOI 10.1088/0953-8984/20/6/064208     Barraza-Lopez S, 2010, PHYS REV LETT, V104, DOI 10.1103/PhysRevLett.104.076807     Beenakker C, 2003, PHYS TODAY, V56, P37, DOI 10.1063/1.1583532     Blake P, 2009, SOLID STATE COMMUN, V149, P1068, DOI 10.1016/j.ssc.2009.02.039     Cayssol J, 2009, PHYS REV B, V79, DOI 10.1103/PhysRevB.79.075428     Danneau R, 2008, PHYS REV LETT, V100, DOI 10.1103/PhysRevLett.100.196802     Darancet P, 2009, PHYS REV LETT, V102, DOI 10.1103/PhysRevLett.102.136803     DiCarlo L, 2008, PHYS REV LETT, V100, DOI 10.1103/PhysRevLett.100.156801     Do VN, 2010, J PHYS-CONDENS MAT, V22, DOI 10.1088/0953-8984/22/42/425301     Du X, 2008, NAT NANOTECHNOL, V3, P491, DOI 10.1038/nnano.2008.199     Giovannetti G, 2008, PHYS REV LETT, V101, DOI 10.1103/PhysRevLett.101.026803     Golizadeh-Mojarad R, 2009, PHYS REV B, V79, DOI 10.1103/PhysRevB.79.085410     Han MY, 2007, PHYS REV LETT, V98, DOI 10.1103/PhysRevLett.98.206805     Hannes WR, 2011, PHYS REV B, V84, DOI 10.1103/PhysRevB.84.045414     Heersche HB, 2007, NATURE, V446, P56, DOI 10.1038/nature05555     Huard B, 2008, PHYS REV B, V78, DOI 10.1103/PhysRevB.78.121402     Jiao LY, 2010, NAT NANOTECHNOL, V5, P321, DOI [10.1038/nnano.2010.54, 10.1038/NNANO.2010.54]     Khomyakov P., 2009, PHYS REV B, V79     Khomyakov PA, 2010, PHYS REV B, V82, DOI 10.1103/PhysRevB.82.115437     Lee EJH, 2008, NAT NANOTECHNOL, V3, P486, DOI 10.1038/nnano.2008.172     Leonard F, 2011, NAT NANOTECHNOL, V6, P773, DOI [10.1038/nnano.2011.196, 10.1038/NNANO.2011.196]     Malec CE, 2011, J APPL PHYS, V109, DOI 10.1063/1.3554480     Nagashio K, 2010, APPL PHYS LETT, V97, DOI 10.1063/1.3491804     NAZAROV YV, 1994, PHYS REV LETT, V73, P134, DOI 10.1103/PhysRevLett.73.134     Nouchi R, 2010, APPL PHYS LETT, V96, DOI 10.1063/1.3456383     Novoselov KS, 2004, SCIENCE, V306, P666, DOI 10.1126/science.1102896     Perdew JP, 1996, PHYS REV LETT, V77, P3865, DOI 10.1103/PhysRevLett.77.3865     Robinson JA, 2011, APPL PHYS LETT, V98, DOI 10.1063/1.3549183     Rocha AR, 2005, NAT MATER, V4, P335, DOI 10.1038/nmat1349     Saito R, 2000, PHYS REV B, V61, P2981, DOI 10.1103/PhysRevB.61.2981     Stadler R, 2006, PHYS REV B, V74, DOI 10.1103/PhysRevB.74.161405     TROULLIER N, 1991, PHYS REV B, V43, P1993, DOI 10.1103/PhysRevB.43.1993     Tworzydlo J, 2006, PHYS REV LETT, V96, DOI 10.1103/PhysRevLett.96.246802     Varykhalov A, 2010, PHYS REV B, V82, DOI 10.1103/PhysRevB.82.121101     Venugopal A, 2010, APPL PHYS LETT, V96, DOI 10.1063/1.3290248     Xia FN, 2011, NAT NANOTECHNOL, V6, P179, DOI [10.1038/nnano.2011.6, 10.1038/NNANO.2011.6]     Zhang YB, 2005, NATURE, V438, P201, DOI 10.1038/nature04235Barraza-Lopez, Salvador Kindermann, Markus Chou, M. Y.Chou, Mei-Yin/D-3898-2012U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DEFG02-97ER45632]; National Science Foundation [DMR-10-55799, DMR-08-20382]; Georgia Tech MRSECWe thank L. Xian, P. Thibado, K. Park, and M. Kuroda for helpful discussions. S.B.-L. and M.Y.C. acknowledge the support by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award No. DEFG02-97ER45632. M.K. is supported by the National Science Foundation (DMR-10-55799). We thank the support within the Georgia Tech MRSEC, funded by the National Science Foundation (DMR-08-20382), and computer support from Teragrid (TG-PHY090002, NCSA{\textquoteright}s Ember and PSC{\textquoteright}s Blacklight).Amer chemical socWashington</p>
},
	month = {Jul},
	pages = {3424-3430},
	type = {Article},
	abstract = {<p>Graphene is believed to be an excellent candidate material for next-generation electronic devices. However, one needs to take into account the nontrivial effect of metal contacts in order to precisely control the charge injection and extraction processes. We have performed transport calculations for graphene junctions with wetting metal leads (metal leads that bind covalently to graphene) using nonequilibrium Green{\textquoteright}s functions and density functional theory. Quantitative information is provided on the increased resistance with respect to ideal contacts and on the statistics of current fluctuations. We find that charge transport through the studied two-terminal graphene junction with Ti contacts is pseudo-diffusive up to surprisingly high energies.</p>
},
	keywords = {Chemistry, contacts, Fano factor, Graphene junctions, limits, MATERIALS SCIENCE, PHYSICS, pseudodiffusive electron, quantum transport, Science \& Technology - Other Topics, transport},
	isbn = {1530-6984},
	url = {<Go to ISI>://WOS:000306296200012},
	author = {Barraza-Lopez, S. and Kindermann, M. and Chou, M. Y.}
}
