@article {1430,
	title = {Quantum confinement effect in Si/Ge core-shell nanowires: First-principles calculations},
	journal = {Physical Review B},
	volume = {77},
	number = {19},
	year = {2008},
	note = {<p>ISI Document Delivery No.: 316TCTimes Cited: 24Cited Reference Count: 24Cited References:      Yan JA, 2007, PHYS REV B, V76, DOI 10.1103/PhysRevB.76.115319     Bruno M, 2007, PHYS REV LETT, V98     Vo T, 2006, PHYS REV B, V74, DOI 10.1103/PhysRevB.74.045116     Xiang J, 2006, NATURE, V441, P489, DOI 10.1038/nature04796     Bruno M, 2005, PHYS REV B, V72, DOI 10.1103/PhysRevB.72.153310     Noborisaka J, 2005, APPL PHYS LETT, V87, DOI 10.1063/1.2035332     Lu W, 2005, P NATL ACAD SCI USA, V102, P10046, DOI 10.1073/pnas.0504581102     Glazov MM, 2005, PHYS REV B, V71, DOI 10.1103/PhysRevB.71.155313     Musin RN, 2005, PHYS REV B, V71, DOI 10.1103/PhysRevB.71.155318     Rurali R, 2005, PHYS REV LETT, V94, DOI 10.1103/PhysRevLett.94.026805     Zhao XY, 2004, PHYS REV LETT, V92, DOI 10.1103/PhysRevLett.92.236805     Greytak AB, 2004, APPL PHYS LETT, V84, P4176, DOI 10.1063/1.1755846     Cui Y, 2003, NANO LETT, V3, P149, DOI 10.1021/nl025875l     Lauhon LJ, 2002, NATURE, V420, P57, DOI 10.1038/nature01141     Bjork MT, 2002, APPL PHYS LETT, V80, P1058     Gudiksen MS, 2002, NATURE, V415, P617, DOI 10.1038/415617a     Duan XF, 2001, NATURE, V409, P66, DOI 10.1038/35051047     Chang CL, 1998, APPL PHYS LETT, V73, P3568, DOI 10.1063/1.122809     Schaffler F, 1997, SEMICOND SCI TECH, V12, P1515, DOI 10.1088/0268-1242/12/12/001     Kresse G, 1996, PHYS REV B, V54, P11169, DOI 10.1103/PhysRevB.54.11169     Kresse G, 1996, COMP MATER SCI, V6, P15, DOI 10.1016/0927-0256(96)00008-0     TSERBAK C, 1995, SEMICOND SCI TECH, V10, P1604, DOI 10.1088/0268-1242/10/12/008     HYBERTSEN MS, 1986, PHYS REV B, V34, P5390, DOI 10.1103/PhysRevB.34.5390     VANDEWALLE CG, 1986, PHYS REV B, V34, P5621, DOI 10.1103/PhysRevB.34.5621Yang, Li Musin, Ryza N. Wang, Xiao-Qian Chou, M. Y.AMER PHYSICAL SOCCOLLEGE PK</p>
},
	month = {May},
	pages = {5},
	type = {Article},
	abstract = {<p>The electronic structure of Si/Ge core-shell nanowires along the [110] and [111] directions are studied with first-principles calculations. We identify the near-gap electronic states that are spatially separated within the core or the shell region, making it possible for a dopant to generate carriers in a different region. The confinement energies of these core and shell states provide an operational definition of the "band offset," which is not only size dependent but also component dependent. The optimal doping strategy in Si/Ge core-shell nanowires is proposed based on these energy results.</p>
},
	keywords = {FIELD-EFFECT TRANSISTORS, GROWTH, HETEROSTRUCTURES, SEMICONDUCTORS, TOTAL-ENERGY CALCULATIONS, WAVE BASIS-SET},
	isbn = {1098-0121},
	url = {<Go to ISI>://WOS:000256971600104},
	author = {Yang, L. and Musin, R. N. and Wang, X. Q. and Chou, M. Y.}
}
