@article {1394,
	title = {Effect of hydrogen on the surface-energy anisotropy of diamond and silicon},
	journal = {Physical Review B},
	volume = {57},
	number = {11},
	year = {1998},
	note = {<p>ISI Document Delivery No.: ZD807Times Cited: 35Cited Reference Count: 28Cited References:      Stumpf R, 1997, PHYS REV LETT, V78, P4454, DOI 10.1103/PhysRevLett.78.4454     Cheng CL, 1997, PHYS REV LETT, V78, P3713, DOI 10.1103/PhysRevLett.78.3713     Hong S, 1997, PHYS REV B, V55, P9975, DOI 10.1103/PhysRevB.55.9975     Kern G, 1996, SURF SCI, V366, P445, DOI 10.1016/0039-6028(96)00837-0     HornvonHoegen M, 1996, PHYS REV LETT, V76, P2953, DOI 10.1103/PhysRevLett.76.2953     Qin XR, 1996, PHYS REV B, V53, P11100, DOI 10.1103/PhysRevB.53.11100     HORNVONHOEGEN M, 1995, SURF SCI, V337, pL777, DOI 10.1016/0039-6028(95)80036-0     KUTTEL OM, 1995, SURF SCI, V337, pL812, DOI 10.1016/0039-6028(95)80041-7     VASEK JE, 1995, PHYS REV B, V51, P17207, DOI 10.1103/PhysRevB.51.17207     THOMS BD, 1995, SURF SCI, V328, P291, DOI 10.1016/0039-6028(95)00039-9     COPEL M, 1994, PHYS REV LETT, V72, P1236, DOI 10.1103/PhysRevLett.72.1236     ADAMS DP, 1993, APPL PHYS LETT, V63, P3571, DOI 10.1063/1.110100     EAGLESHAM DJ, 1993, J APPL PHYS, V74, P6615, DOI 10.1063/1.355101     HORNVONHOEGEN M, 1993, PHYS REV LETT, V71, P3170, DOI 10.1103/PhysRevLett.71.3170     ROSENFELD G, 1993, PHYS REV LETT, V71, P895, DOI 10.1103/PhysRevLett.71.895     MADEY TE, 1993, SURF SCI, V287, P826, DOI 10.1016/0039-6028(93)91081-Y     EAGLESHAM DJ, 1993, PHYS REV LETT, V70, P1643, DOI 10.1103/PhysRevLett.70.1643     VANDERVEGT HA, 1992, PHYS REV LETT, V68, P3335, DOI 10.1103/PhysRevLett.68.3335     BROMMER KD, 1992, PHYS REV LETT, V68, P1355, DOI 10.1103/PhysRevLett.68.1355     BOLAND JJ, 1992, SURF SCI, V261, P17, DOI 10.1016/0039-6028(92)90214-Q     CHIN RP, 1992, PHYS REV B, V45, P1522, DOI 10.1103/PhysRevB.45.1522     NORTHRUP JE, 1991, PHYS REV B, V44, P1419, DOI 10.1103/PhysRevB.44.1419     BOLAND JJ, 1990, PHYS REV LETT, V65, P3325, DOI 10.1103/PhysRevLett.65.3325     DUMAS P, 1990, PHYS REV LETT, V65, P1124, DOI 10.1103/PhysRevLett.65.1124     HIGASHI GS, 1990, APPL PHYS LETT, V56, P656, DOI 10.1063/1.102728     COPEL M, 1989, PHYS REV LETT, V63, P632, DOI 10.1103/PhysRevLett.63.632     CHABAL YJ, 1985, PHYS REV LETT, V54, P1055, DOI 10.1103/PhysRevLett.54.1055     LURIE PG, 1977, SURF SCI, V65, P453, DOI 10.1016/0039-6028(77)90459-9Hong, S Chou, MYAMERICAN PHYSICAL SOCCOLLEGE PK</p>
},
	month = {Mar},
	pages = {6262-6265},
	type = {Article},
	abstract = {<p>We have evaluated the surface free energies of hydrogen-covered (100), (111), and (110) surfaces of diamond and silicon as a function of the hydrogen chemical potential using first-principles methods. The change in surface-energy anisotropy and equilibrium crystal shape due to hydrogen adsorption is examined. The three low-index facets are affected differently by the presence of hydrogen and unexpected differences are found between diamond and silicon. Taking into account possible formation of local facets on the hydrogen-covered (100) surfaces, we find that the dihydride phase is not stable on both C(100) and Si(100). nor is the 3x1 phase on C(100).</p>
},
	keywords = {AG(111), BY-LAYER GROWTH, DEPENDENCE, HOMOEPITAXY, NUCLEATION, RECONSTRUCTION, SATURATED SI(100) SURFACE, SI, SI(001), SI(111)},
	isbn = {0163-1829},
	url = {<Go to ISI>://WOS:000072726400017},
	author = {Hong, S. and Chou, M. Y.}
}
