@article {1367,
	title = {TIGHT-BINDING STUDY OF THE ELECTRONIC-STRUCTURE OF AMORPHOUS-SILICON},
	journal = {Physical Review B},
	volume = {43},
	number = {8},
	year = {1991},
	note = {<p>ISI Document Delivery No.: FC704Times Cited: 17Cited Reference Count: 23Cited References:      BISWAS R, 1989, PHYS REV LETT, V63, P1491, DOI 10.1103/PhysRevLett.63.1491     LUEDTKE WD, 1989, PHYS REV B, V40, P1164, DOI 10.1103/PhysRevB.40.1164     STATHIS JH, 1989, PHYS REV B, V40, P1232, DOI 10.1103/PhysRevB.40.1232     MARTINMORENO L, 1989, PHYS REV B, V39, P3445, DOI 10.1103/PhysRevB.39.3445     FEDDERS PA, 1989, PHYS REV B, V39, P1134, DOI 10.1103/PhysRevB.39.1134     KELIRES PC, 1988, PHYS REV LETT, V61, P562, DOI 10.1103/PhysRevLett.61.562     FEDDERS PA, 1988, PHYS REV B, V37, P8506, DOI 10.1103/PhysRevB.37.8506     STUTZMANN M, 1988, PHYS REV LETT, V60, P1682, DOI 10.1103/PhysRevLett.60.1682     STATHIS JH, 1988, PHYS REV B, V37, P6579, DOI 10.1103/PhysRevB.37.6579     LUEDTKE WD, 1988, PHYS REV B, V37, P4656, DOI 10.1103/PhysRevB.37.4656     BISWAS R, 1987, PHYS REV B, V36, P7437, DOI 10.1103/PhysRevB.36.7437     KLUGE MD, 1987, PHYS REV B, V36, P4234, DOI 10.1103/PhysRevB.36.4234     PANTELIDES ST, 1987, PHYS REV B, V36, P3479, DOI 10.1103/PhysRevB.36.3479     BROUGHTON JQ, 1987, PHYS REV B, V35, P9120, DOI 10.1103/PhysRevB.35.9120     PANTELIDES ST, 1987, PHYS REV LETT, V58, P1344, DOI 10.1103/PhysRevLett.58.1344     FEDDERS PA, 1987, PHYS REV LETT, V58, P1156, DOI 10.1103/PhysRevLett.58.1156     PANTELIDES ST, 1986, PHYS REV LETT, V57, P2979, DOI 10.1103/PhysRevLett.57.2979     ALLEN PB, 1986, PHYS REV B, V34, P859, DOI 10.1103/PhysRevB.34.859     BIEGELSEN DK, 1986, PHYS REV B, V33, P3006, DOI 10.1103/PhysRevB.33.3006     JACKSON WB, 1985, J NON-CRYST SOLIDS, V77-8, P281, DOI 10.1016/0022-3093(85)90657-X     STILLINGER FH, 1985, PHYS REV B, V31, P5262, DOI 10.1103/PhysRevB.31.5262     CHADI DJ, 1979, J VAC SCI TECHNOL, V16, P1290, DOI 10.1116/1.570143     SLATER JC, 1954, PHYS REV, V94, P1498, DOI 10.1103/PhysRev.94.1498MERCER, JL CHOU, MYAMERICAN PHYSICAL SOCCOLLEGE PK</p>
},
	month = {Mar},
	pages = {6768-6771},
	type = {Note},
	abstract = {<p>We have performed tight-binding calculations on a model of an amorphous silicon sample generated previously by a molecular-dynamics simulation employing the Stillinger-Weber potential. The sample consists of 588 atoms and contains a high density of floating-bond defects. Two tight-binding calculations are presented, one using the widely accepted Chadi parameters, which include only nearest-neighbor interactions, and the other using the parameters recently proposed by Allen, Broughton, and McMahan (ABM) [Phys. Rev. B 34, 859 (1986)] for a nonorthogonal basis set. Comparison of the densities of states shows similar behavior in the valence band, but the electron density near a defect is less localized with the ABM parameters. It is also found that the projected density of states on the fivefold-coordinated atoms is very close to that on the fourfold-coordinated atoms, while the projected density of states on the threefold-coordinated atoms is distinctly different and has more states in the gap.</p>
},
	keywords = {DANGLING BONDS, DEFECTS, ENERGETICS, FLOATING BONDS, MOLECULAR-DYNAMICS SIMULATIONS, SI},
	isbn = {0163-1829},
	url = {<Go to ISI>://WOS:A1991FC70400060},
	author = {Mercer, J. L. and Chou, M. Y.}
}
