<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Zhang, Wenjing</style></author><author><style face="normal" font="default" size="100%">Lin, Cheng-Te</style></author><author><style face="normal" font="default" size="100%">Liu, Keng-Ku</style></author><author><style face="normal" font="default" size="100%">Tite, Teddy</style></author><author><style face="normal" font="default" size="100%">Su, Ching-Yuan</style></author><author><style face="normal" font="default" size="100%">Chung-Huai Chang</style></author><author><style face="normal" font="default" size="100%">Lee, Yi-Hsien</style></author><author><style face="normal" font="default" size="100%">Chu, Chih-Wei</style></author><author><style face="normal" font="default" size="100%">Wei, Kung-Hwa</style></author><author><style face="normal" font="default" size="100%">Jer-Lai Kuo</style></author><author><style face="normal" font="default" size="100%">Lain-Jong Li</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Opening an Electrical Band Gap of Bilayer Graphene with Molecular Doping</style></title><secondary-title><style face="normal" font="default" size="100%">ACS Nano</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2011</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://pubs.acs.org/doi/abs/10.1021/nn202463g</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">9</style></number><volume><style face="normal" font="default" size="100%">5</style></volume><pages><style face="normal" font="default" size="100%">7517-7524</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The opening of an electrical band gap in graphene is crucial for its application for logic circuits. Recent studies have shown that an energy gap in Bernal-stacked bilayer graphene can be generated by applying an electric displacement field. Molecular doping has also been proposed to open the electrical gap of bilayer graphene by breaking either in-plane symmetry or inversion symmetry; however, no direct observation of an electrical gap has been reported. Here we discover that the organic molecule triazine is able to form a uniform thin coating on the top surface of a bilayer graphene, which efficiently blocks the accessible doping sites and prevents ambient p-doping on the top layer. The charge distribution asymmetry between the top and bottom layers can then be enhanced simply by increasing the p-doping from oxygen/moisture to the bottom layer. The on/off current ratio for a bottom-gated bilayer transistor operated in ambient condition is improved by at least 1 order of magnitude. The estimated electrical band gap is up to ∼111 meV at room temperature. The observed electrical band gap dependence on the hole-carrier density increase agrees well with the recent density-functional theory calculations. This research provides a simple method to obtain a graphene bilayer transistor with a moderate on/off current ratio, which can be stably operated in air without the need to use an additional top gate.&lt;/p&gt;
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