Structure determination of the Si3N4/Si(111)-(8 x 8) surface: A combined study of Kikuchi electron holography, scanning tunneling microscopy, and ab initio calculations
- Citation:
- Ahn, H., Wu C. L., Gwo S., Wei C. M., & Chou Y. C. (2001). Structure determination of the Si3N4/Si(111)-(8 x 8) surface: A combined study of Kikuchi electron holography, scanning tunneling microscopy, and ab initio calculations. Physical Review Letters. 86, 2818-2821., Mar, Number 13
Abstract:
A comprehensive atomic model for the reconstructed surface of Si3N4 thin layer grown on Si(lll) is presented. Kikuchi electron holography images clearly show the existence of adatoms on the Si3N4(0001)/Si(111)-(8 x 8) surface. Compared with the nb initio calculations, more than 30 symmetry-inequivalent atomic pairs in the outmost layers are successfully identified. Scanning tunneling microscopy (STM) images show diamond-shaped unit cells and nine adatoms in each cell. High-resolution STM images reveal extra features and are in good agreement with the partial charge density distribution obtained from total-energy calculations.
Notes:
ISI Document Delivery No.: 414YDTimes Cited: 37Cited Reference Count: 32Cited References: AVOURIS P, 1989, PHYS REV B, V39, P5091, DOI 10.1103/PhysRevB.39.5091 Bachlechner ME, 2000, PHYS REV LETT, V84, P322, DOI 10.1103/PhysRevLett.84.322 BAUER E, 1995, PHYS REV B, V51, P17891, DOI 10.1103/PhysRevB.51.17891 BOZSO F, 1988, PHYS REV B, V38, P3937, DOI 10.1103/PhysRevB.38.3937 Chang CY, 1999, PHYS REV B, V59, P10453, DOI 10.1103/PhysRevB.59.R10453 DUFOUR G, 1994, SURF SCI, V304, P33, DOI 10.1016/0039-6028(94)90750-1 Garfunkel E., 1998, FUNDAMENTAL ASPECTS Ha JS, 1998, APPL PHYS A-MATER, V66, pS495, DOI 10.1007/s003390051190 ISU T, 1982, SOLID STATE COMMUN, V42, P477, DOI 10.1016/0038-1098(82)90977-2 KRESSE G, 1993, PHYS REV B, V47, P558, DOI 10.1103/PhysRevB.47.558 KRESSE G, 1994, J PHYS-CONDENS MAT, V6, P8245, DOI 10.1088/0953-8984/6/40/015 KRESSE G, 1994, PHYS REV B, V49, P14251, DOI 10.1103/PhysRevB.49.14251 LIU AY, 1990, PHYS REV B, V41, P10727, DOI 10.1103/PhysRevB.41.10727 Losio R, 2000, PHYS REV B, V61, P10845, DOI 10.1103/PhysRevB.61.10845 MEYER C, 1995, PHYS REV LETT, V74, P3001, DOI 10.1103/PhysRevLett.74.3001 Morita Y, 1999, SURF SCI, V443, pL1037, DOI 10.1016/S0039-6028(99)01021-3 NISHIJIMA M, 1984, SURF SCI, V137, P473, DOI 10.1016/0039-6028(84)90524-7 Omeltchenko A, 2000, PHYS REV LETT, V84, P318, DOI 10.1103/PhysRevLett.84.318 ROBERTSON J, 1983, J APPL PHYS, V54, P4490, DOI 10.1063/1.332647 ROBERTSON J, 1981, PHILOS MAG B, V44, P215, DOI 10.1080/01418638108222558 Rottger B, 1996, J VAC SCI TECHNOL B, V14, P1051 SCHROTT AG, 1981, SURF SCI, V111, P39, DOI 10.1016/0039-6028(81)90473-8 SCHROTT AG, 1982, SURF SCI, V123, P204, DOI 10.1016/0039-6028(82)90323-5 Shen TS, 1999, SURF REV LETT, V6, P97, DOI 10.1142/S0218625X99000111 VANBOMME.AJ, 1967, SURF SCI, V8, P381, DOI 10.1016/0039-6028(67)90046-5 WANG H, 1999, SURF SCI, V443, pL1037 WANG XS, 1999, PHYS REV B, V60, P2146 WEI CM, 1992, SURF SCI, V274, pL577, DOI 10.1016/0039-6028(92)90828-T WIGGINS MD, 1981, J VAC SCI TECHNOL, V18, P965, DOI 10.1116/1.570965 XU YN, 1995, PHYS REV B, V51, P17379, DOI 10.1103/PhysRevB.51.17379 Zhao GL, 1998, PHYS REV B, V58, P1887, DOI 10.1103/PhysRevB.58.1887 ZHOU RH, 1991, SURF SCI, V249, P129Ahn, H Wu, CL Gwo, S Wei, CM Chou, YCAMERICAN PHYSICAL SOCCOLLEGE PK
