<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Gruznev, D. V.</style></author><author><style face="normal" font="default" size="100%">Matetskiy, A. V.</style></author><author><style face="normal" font="default" size="100%">Zotov, A. V.</style></author><author><style face="normal" font="default" size="100%">Saranin, A. A.</style></author><author><style face="normal" font="default" size="100%">Chou, J. P.</style></author><author><style face="normal" font="default" size="100%">Wei, C. M.</style></author><author><style face="normal" font="default" size="100%">Wang, Y. L.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Interplay between adsorbed C-60 fullerenes and point defects on a Si(111)root 3 x root 3-In reconstructed surface</style></title><secondary-title><style face="normal" font="default" size="100%">Surface Science</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">ADSORPTION</style></keyword><keyword><style  face="normal" font="default" size="100%">Atom-solid interactions</style></keyword><keyword><style  face="normal" font="default" size="100%">ATOMS</style></keyword><keyword><style  face="normal" font="default" size="100%">DIFFUSION</style></keyword><keyword><style  face="normal" font="default" size="100%">Fullerence</style></keyword><keyword><style  face="normal" font="default" size="100%">Indium</style></keyword><keyword><style  face="normal" font="default" size="100%">METALS</style></keyword><keyword><style  face="normal" font="default" size="100%">ROOT 3-IN SURFACE</style></keyword><keyword><style  face="normal" font="default" size="100%">Scanning tunneling microscopy (STM)</style></keyword><keyword><style  face="normal" font="default" size="100%">Silicon</style></keyword><keyword><style  face="normal" font="default" size="100%">STM</style></keyword><keyword><style  face="normal" font="default" size="100%">Surface structure</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2011</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Dec</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:000296175100019</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">23-24</style></number><volume><style face="normal" font="default" size="100%">605</style></volume><pages><style face="normal" font="default" size="100%">2050-2054</style></pages><isbn><style face="normal" font="default" size="100%">0039-6028</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Adsorption of C-60 onto Si(111)root 3 x root 3-In surface presents a fascinating example of interplay between molecular adsorbate and surface structural defects. It has been found that adsorbing C-60 molecules are trapped by the substitutional Si-defects. In turn, the group of a few adsorbed C-60 can act as a trap for the mobile vacancies of the root 3 x root 3-In reconstruction. Namely, adsorbed C-60 induces a strain in the indium layer, and when a mobile vacancy happens to get into the surface area surrounded by fullerenes, the In atoms between the C-60 and the vacancy shift from the T-4 to the H-3 sites, fixing a vacancy in a given location. (C) 2011 Elsevier B.V. All rights reserved.&lt;/p&gt;
</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><notes><style face="normal" font="default" size="100%">&lt;p&gt;ISI Document Delivery No.: 837EYTimes Cited: 1Cited Reference Count: 17Cited References: BEDROSSIAN P, 1990, NUCL INSTRUM METH B, V48, P296, DOI 10.1016/0168-583X(90)90126-F Felici R, 2005, NAT MATER, V4, P688, DOI 10.1038/nmat1456 HAMERS RJ, 1988, PHYS REV LETT, V60, P2527, DOI 10.1103/PhysRevLett.60.2527 Hibino H, 1996, PHYS REV B, V54, P5763, DOI 10.1103/PhysRevB.54.5763 KOHN W, 1965, PHYS REV, V140, P1133 Kresse G, 1996, COMP MATER SCI, V6, P15, DOI 10.1016/0927-0256(96)00008-0 KRESSE G, 1993, PHYS REV B, V47, P558, DOI 10.1103/PhysRevB.47.558 Kresse G, 1999, PHYS REV B, V59, P1758, DOI 10.1103/PhysRevB.59.1758 Li HI, 2009, PHYS REV LETT, V103, DOI 10.1103/PhysRevLett.103.056101 Owman F, 1996, SURF SCI, V359, P122, DOI 10.1016/0039-6028(96)00368-8 Perdew JP, 1996, PHYS REV LETT, V77, P3865, DOI 10.1103/PhysRevLett.77.3865 Saranin AA, 2006, PHYS REV B, V74, DOI 10.1103/PhysRevB.74.035436 Saranin AA, 1997, SURF SCI, V388, P299, DOI 10.1016/S0039-6028(97)00414-7 Saranin AA, 1997, PHYS REV B, V56, P7449, DOI 10.1103/PhysRevB.56.7449 Torrelles X, 2010, PHYS REV B, V81, DOI 10.1103/PhysRevB.81.041404 van Gastel R, 2000, NATURE, V408, P665, DOI 10.1038/35047156 van Gastel R, 2001, PHYS REV LETT, V86, P1562, DOI 10.1103/PhysRevLett.86.1562Gruznev, D. V. Matetskiy, A. V. Zotov, A. V. Saranin, A. A. Chou, J. P. Wei, C. M. Wang, Y. L.Russian Foundation for Basic Research [09-02-00094, 09-02-98500]; Russian Federal Agency for Science and Innovations [02.740.11.0111, 4634.2010.2]; National Science Council of Taiwan [97-2923-M001-003-MY3]Part of this work was supported by the Russian Foundation for Basic Research (Grant Nos. 09-02-00094 and 09-02-98500), and the Russian Federal Agency for Science and Innovations (Grant Nos. 02.740.11.0111 and 4634.2010.2), and the National Science Council of Taiwan (Grant No. 97-2923-M001-003-MY3).ELSEVIER SCIENCE BVAMSTERDAM&lt;/p&gt;
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