@article {539,
	title = {Electronic transport properties of quantum-well states in ultrathin Pb (111) films},
	journal = {Physical Review B},
	volume = {78},
	number = {24},
	year = {2008},
	note = {<p>ISI Document Delivery No.: 391PYTimes Cited: 8Cited Reference Count: 34Cited References:      BLOCHL PE, 1994, PHYS REV B, V50, P17953, DOI 10.1103/PhysRevB.50.17953     Chiang TC, 2000, SURF SCI REP, V39, P181, DOI 10.1016/S0167-5729(00)00006-6     Czoschke P, 2003, PHYS REV LETT, V91, DOI 10.1103/PhysRevLett.91.226801     Dil JH, 2006, PHYS REV B, V73, DOI 10.1103/PhysRevB.73.161308     Dil JH, 2007, PHYS REV B, V75, DOI 10.1103/PhysRevB.75.161401     Eom D, 2006, PHYS REV LETT, V96, DOI 10.1103/PhysRevLett.96.027005     Fuchs K, 1938, P CAMB PHILOS SOC, V34, P100     Guo Y, 2004, SCIENCE, V306, P1915, DOI 10.1126/science.1105130     HASEGAWA S, 1992, PHYS REV LETT, V68, P1192, DOI 10.1103/PhysRevLett.68.1192     Hasegawa S, 2003, SURF REV LETT, V10, P963, DOI 10.1142/S0218625X03005736     Hirahara T., 2004, e-Journal of Surface Science and Nanotechnology, V2, DOI 10.1380/ejssnt.2004.141     Hong HW, 2003, PHYS REV LETT, V90, DOI 10.1103/PhysRevLett.90.076104     Hupalo M, 2002, PHYS REV B, V65, DOI [10.1103/PhysRevB.65.205406, 10.1103/PhysRevB.65.115406]     JALOCHOWSKI M, 1988, PHYS REV B, V38, P5272, DOI 10.1103/PhysRevB.38.5272     JALOCHOWSKI M, 1992, PHYS REV B, V45, P13607, DOI 10.1103/PhysRevB.45.13607     Jalochowski M, 1996, PHYS REV LETT, V76, P4227, DOI 10.1103/PhysRevLett.76.4227     Kresse G, 1996, PHYS REV B, V54, P11169, DOI 10.1103/PhysRevB.54.11169     Kresse G, 1999, PHYS REV B, V59, P1758, DOI 10.1103/PhysRevB.59.1758     Matsuda I, 2005, PHYS REV B, V71, DOI 10.1103/PhysRevB.71.235315     MEADEN GT, 1965, ELECTRICAL RESISTANC, P16     Ozer MM, 2006, NAT PHYS, V2, P173, DOI 10.1038/nphys244     Ozer MM, 2005, PHYS REV B, V72, DOI 10.1103/PhysRevB.72.113409     Ozer MM, 2007, SCIENCE, V316, P1594, DOI 10.1126/science.1142159     Perdew JP, 1996, PHYS REV LETT, V77, P3865, DOI 10.1103/PhysRevLett.77.3865     Pfennigstorf O, 2002, PHYS REV B, V65, DOI 10.1103/PhysRevB.65.045412     SHIRLEY EL, 1995, PHYS REV B, V51, P13614, DOI 10.1103/PhysRevB.51.13614     SONDHEIMER EH, 1952, ADV PHYS, V1, P1, DOI 10.1080/00018735200101151     TANIKAWA T, 2003, E J SURF SCI NANOTEC, V1, P50     TRIVEDI N, 1988, PHYS REV B, V38, P12298, DOI 10.1103/PhysRevB.38.12298     Upton MH, 2004, PHYS REV LETT, V93, DOI 10.1103/PhysRevLett.93.026802     Upton MH, 2005, PHYS REV B, V71, DOI 10.1103/PhysRevB.71.033403     Vilfan I, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.241306     Wei CM, 2007, PHYS REV B, V75, DOI 10.1103/PhysRevB.75.195417     Wei CM, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.233408Miyata, Nobuhiro Horikoshi, Kotaro Hirahara, Toru Hasegawa, Shuji Wei, C. M. Matsuda, IwaoJapan Society for the Promotion of ScienceWe are grateful to M. C. Tringides for helpful discussion. We would like to thank Rei Hobara for his assistance with the ARPES experiment. This work has been supported by Grants-In-Aid from Japan Society for the Promotion of Science.AMER PHYSICAL SOCCOLLEGE PK</p>
},
	month = {Dec},
	pages = {6},
	type = {Article},
	abstract = {<p>Electrical conduction mechanism in ultrathin Pb (111) films formed on the Si(111)root 3x root 3-Pb surface has been investigated by means of in situ conductivity measurements, angle-resolved photoemission spectroscopy, and first-principles calculations. To investigate the origin of the bilayer oscillation observed in the present conductivity measurement, we perform some simulations based on the calculated band structure. They reveal that the density of states near the Fermi level cannot explain the bilayer oscillation, therefore, exclusively assigning it to the relaxation time. Surface roughness during the bilayer film growth seems to play a crucial role in the bilayer oscillation of the relaxation time.</p>
},
	keywords = {AUGMENTED-WAVE METHOD, METALLIC-FILMS, RESISTIVITY, SIZE, SUPERCONDUCTIVITY, SURFACE},
	isbn = {1098-0121},
	url = {<Go to ISI>://WOS:000262246400072},
	author = {Miyata, N. and Horikoshi, K. and Hirahara, T. and Hasegawa, S. and Wei, C. M. and Matsuda, I.}
}
