@article {484,
	title = {FIELD EVAPORATION OF SILICON IN THE FIELD-ION MICROSCOPE AND SCANNING TUNNELING MICROSCOPE CONFIGURATIONS},
	journal = {Physical Review Letters},
	volume = {69},
	number = {16},
	year = {1992},
	note = {<p>ISI Document Delivery No.: JT980Times Cited: 39Cited Reference Count: 15Cited References: BOLDING BC, 1990, PHYS REV B, V41, P10568, DOI 10.1103/PhysRevB.41.10568 GOMER R, 1963, J CHEM PHYS, V38, P1613, DOI 10.1063/1.1776932 Jackson J.D., 1962, CLASSICAL ELECTRODYN Kobayashi A., COMMUNICATION LYO IW, 1989, SCIENCE, V245, P1369, DOI 10.1126/science.245.4924.1369 MAMIN HJ, 1990, PHYS REV LETT, V65, P2418, DOI 10.1103/PhysRevLett.65.2418 MISKOVSKY NM, 1992, PHYS REV B, V46, P2640, DOI 10.1103/PhysRevB.46.2640 Muller E. W., 1969, FIELD ION MICROSCOPY STROSCIO JA, 1991, SCIENCE, V254, P1319, DOI 10.1126/science.254.5036.1319 TERSOFF J, 1988, PHYS REV B, V37, P6991, DOI 10.1103/PhysRevB.37.6991 TSONG TT, 1991, PHYS REV B, V44, P13703, DOI 10.1103/PhysRevB.44.13703 TSONG TT, 1979, SURF SCI, V81, P28, DOI 10.1016/0039-6028(79)90503-X Tsong TT, 1990, ATOM PROBE FIELD ION TSONG TT, 1979, SURF SCI, V85, P1, DOI 10.1016/0039-6028(79)90228-0 WANG J, 1991, PHYS REV B, V43, P12571, DOI 10.1103/PhysRevB.43.12571MISKOVSKY, NM WEI, CM TSONG, TTAMERICAN PHYSICAL SOCCOLLEGE PK</p>
},
	month = {Oct},
	pages = {2427-2430},
	type = {Article},
	abstract = {<p>Field evaporation of silicon as positive and negative ions in the field ion microscope and scanning tunneling microscope configurations is investigated with the charge-exchange model using atomic potentials from an empirical potential due to Tersoff [Phys. Rev. B 37, 6991 (1988)] and an environment dependent potential developed by Bolding and Andersen [Phys. Rev. B 41, 10568 (1990)]. For the geometry of the field ion microscope, Si+ should be the observable ion species. In the close-spaced electrode geometry of the scanning tunneling microscope, Si2- should be the favored ion species since it requires the lowest evaporation field.</p>
},
	keywords = {HIGH ELECTRIC-FIELDS, PENETRATION, SEMICONDUCTOR, SURFACES},
	isbn = {0031-9007},
	url = {<Go to ISI>://WOS:A1992JT98000030},
	author = {Miskovsky, N. M. and Wei, C. M. and Tsong, T. T.}
}
