@article {523,
	title = {Diffusion of an adsorbed Si atom on the Si(111)-(7x7) surface},
	journal = {Physical Review B},
	volume = {67},
	number = {3},
	year = {2003},
	note = {<p>ISI Document Delivery No.: 644WRTimes Cited: 20Cited Reference Count: 37Cited References: BEDROSSIAN PJ, 1995, PHYS REV LETT, V74, P3648, DOI 10.1103/PhysRevLett.74.3648 BROCKS G, 1991, PHYS REV LETT, V66, P1729, DOI 10.1103/PhysRevLett.66.1729 CEPERLEY DM, 1980, PHYS REV LETT, V45, P566, DOI 10.1103/PhysRevLett.45.566 Cho K, 1997, EUROPHYS LETT, V39, P287, DOI 10.1209/epl/i1997-00349-x Cho KJ, 1998, SURF SCI, V396, pL261, DOI 10.1016/S0039-6028(97)00848-0 Gomezrodriguez JM, 1996, PHYS REV LETT, V76, P799, DOI 10.1103/PhysRevLett.76.799 HOHENBERG P, 1964, PHYS REV B, V136, pB864, DOI 10.1103/PhysRev.136.B864 Hwang IS, 1997, PHYS REV LETT, V78, P4797, DOI 10.1103/PhysRevLett.78.4797 Hwang IS, 1999, PHYS REV LETT, V83, P120, DOI 10.1103/PhysRevLett.83.120 Jeong S, 1997, PHYS REV LETT, V79, P4425, DOI 10.1103/PhysRevLett.79.4425 Kim KY, 1999, PHYS REV LETT, V82, P1329, DOI 10.1103/PhysRevLett.82.1329 KOHN W, 1965, PHYS REV, V140, P1133 Kresse G, 1996, COMP MATER SCI, V6, P15, DOI 10.1016/0927-0256(96)00008-0 KRESSE G, 1993, PHYS REV B, V47, P558, DOI 10.1103/PhysRevB.47.558 KRESSE G, 1994, J PHYS-CONDENS MAT, V6, P8245, DOI 10.1088/0953-8984/6/40/015 Lee SH, 2000, PHYS REV LETT, V84, P1724, DOI 10.1103/PhysRevLett.84.1724 Lee SH, 1999, PHYS REV LETT, V82, P968, DOI 10.1103/PhysRevLett.82.968 Lim H, 1995, PHYS REV B, V52, P17231, DOI 10.1103/PhysRevB.52.17231 Lo RL, 1998, PHYS REV LETT, V80, P5584, DOI 10.1103/PhysRevLett.80.5584 Lo RL, 1998, PHYS REV B, V58, P9867, DOI 10.1103/PhysRevB.58.9867 Lu ZY, 2000, PHYS REV B, V62, P8104, DOI 10.1103/PhysRevB.62.8104 MILLS G, 1995, SURF SCI, V324, P305, DOI 10.1016/0039-6028(94)00731-4 MO YW, 1991, PHYS REV LETT, V66, P1998, DOI 10.1103/PhysRevLett.66.1998 PERDEW JP, 1981, PHYS REV B, V23, P5048, DOI 10.1103/PhysRevB.23.5048 PERDEW JP, 1992, PHYS REV B, V46, P6671, DOI 10.1103/PhysRevB.46.6671 Qin XR, 2000, PHYS REV LETT, V85, P3660, DOI 10.1103/PhysRevLett.85.3660 Sato T, 2000, SURF SCI, V445, P130, DOI 10.1016/S0039-6028(99)01059-6 Sato T, 2000, J VAC SCI TECHNOL A, V18, P960, DOI 10.1116/1.582283 Swartzentruber BS, 1996, PHYS REV LETT, V77, P2518, DOI 10.1103/PhysRevLett.77.2518 Smith AP, 1996, PHYS REV LETT, V77, P1326, DOI 10.1103/PhysRevLett.77.1326 TAKAYANAGI K, 1985, SURF SCI, V164, P367, DOI 10.1016/0039-6028(85)90753-8 Tanida Y, 1996, MAT SCI ENG B-SOLID, V37, P131, DOI 10.1016/0921-5107(95)01470-5 Vitali L, 1999, PHYS REV LETT, V83, P316, DOI 10.1103/PhysRevLett.83.316 Vittadini A, 1995, PHYS REV LETT, V75, P4756, DOI 10.1103/PhysRevLett.75.4756 Vittadini A, 1997, SURF SCI, V383, pL779, DOI 10.1016/S0039-6028(97)00251-3 YU BD, 1993, PHYS REV LETT, V71, P585, DOI 10.1103/PhysRevLett.71.585 ZHANG ZY, 1995, PHYS REV LETT, V74, P3644, DOI 10.1103/PhysRevLett.74.3644Chang, CM Wei, CMAMERICAN PHYSICAL SOCCOLLEGE PK</p>
},
	month = {Jan},
	pages = {4},
	type = {Article},
	abstract = {<p>We present first-principles calculations that provide a detailed diffusion picture of an adsorbed Si atom on the Si(111)-(7x7) surface. Several diffusion paths for the adsorbed Si atom are established by mapping out the total energy as a function of its positions on the surface. For diffusion between the faulted and unfaulted halves, the energy barriers range from 0.96 to 1.21 eV, while remarkable low-energy barriers from 0.3 to 0.7 eV are discovered within the faulted and unfaulted regions.</p>
},
	keywords = {AB-INITIO, AD-DIMERS, ADATOM, ADSORPTION, BINDING, DYNAMICS, HYDROGEN-ATOMS, SCANNING-TUNNELING-MICROSCOPY, SI(001), SI(100) SURFACE},
	isbn = {1098-0121},
	url = {<Go to ISI>://WOS:000180943800017},
	author = {Chang, C. M. and Wei, C. M.}
}
