@article {529,
	title = {Quantum confinement and electronic properties of silicon nanowires},
	journal = {Physical Review Letters},
	volume = {92},
	number = {23},
	year = {2004},
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},
	month = {Jun},
	pages = {4},
	type = {Article},
	abstract = {<p>We investigate the structural, electronic, and optical properties of hydrogen-passivated silicon nanowires along [110] and [111] directions with diameter d up to 4.2 nm from first principles. The size and orientation dependence of the band gap is investigated and the local-density gap is corrected with the GW approximation. Quantum confinement becomes significant for d\&lt;2.2 nm, where the dielectric function exhibits strong anisotropy and new low-energy absorption peaks start to appear in the imaginary part of the dielectric function for polarization along the wire axis.</p>
},
	keywords = {1ST-PRINCIPLES, BAND-GAPS, BUILDING-BLOCKS, DEVICES, OPTICAL-PROPERTIES, POROUS SILICON, WIRES},
	isbn = {0031-9007},
	url = {<Go to ISI>://WOS:000221961900044},
	author = {Zhao, X. Y. and Wei, C. M. and Yang, L. and Chou, M. Y.}
}
