@article {545,
	title = {Structural properties of Cu clusters on Si(111):Cu2Si magic family},
	journal = {Surface Science},
	volume = {603},
	number = {18},
	year = {2009},
	note = {<p>ISI Document Delivery No.: 504TNTimes Cited: 3Cited Reference Count: 32Cited References: Ahn JR, 2005, PHYS REV B, V72, DOI 10.1103/PhysRevB.72.113309 Chang HH, 2004, PHYS REV LETT, V92, DOI 10.1103/PhysRevLett.92.066103 De Santis M, 2001, SURF SCI, V477, P179, DOI 10.1016/S0039-6028(01)00708-7 Ho MS, 2007, SURF SCI, V601, P3974, DOI 10.1016/j.susc.2007.04.100 Jia JF, 2002, APPL PHYS LETT, V80, P3186, DOI 10.1063/1.1474620 Jia JF, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.165412 Li Jian-Long, 2002, Phys Rev Lett, V88, P066101, DOI 10.1103/PhysRevLett.88.066101 Kawasaki T, 2001, SURF SCI, V487, P39, DOI 10.1016/S0039-6028(01)00895-0 KOHN W, 1965, PHYS REV, V140, P1133 KOSHIKAWA T, 1995, SURF SCI, V331, P506, DOI 10.1016/0039-6028(95)00267-7 Kotlyar VG, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.165401 Kresse G, 1996, PHYS REV B, V54, P11169, DOI 10.1103/PhysRevB.54.11169 Kresse G, 1996, COMP MATER SCI, V6, P15, DOI 10.1016/0927-0256(96)00008-0 Kresse G, 1999, PHYS REV B, V59, P1758, DOI 10.1103/PhysRevB.59.1758 KRESSE G, 1993, PHYS REV B, V47, P559 KRESSE G, 1994, PHYS REV B, V49, P14251, DOI 10.1103/PhysRevB.49.14251 Lai MY, 2001, PHYS REV B, V64, DOI 10.1103/PhysRevB.64.241404 Li SC, 2004, PHYS REV LETT, V93, DOI 10.1103/PhysRevLett.93.116103 Mebel AM, 2000, CHEM PHYS LETT, V318, P27, DOI 10.1016/S0009-2614(99)01438-4 Neff HJ, 2001, PHYS REV B, V64, DOI 10.1103/PhysRevB.64.235415 Ohtake A, 2006, PHYS REV B, V73, DOI 10.1103/PhysRevB.73.033301 Perdew JP, 1996, PHYS REV LETT, V77, P3865, DOI 10.1103/PhysRevLett.77.3865 STTOSCH H, 1989, SURF SCI, V211, P133 Takeuchi N, 2001, PHYS REV B, V63, DOI 10.1103/PhysRevB.63.245325 Wang YL, 2008, INT REV PHYS CHEM, V27, P317, DOI 10.1080/01442350801943708 Wu KH, 2003, PHYS REV LETT, V91, DOI 10.1103/PhysRevLett.91.126101 YASUE T, 1993, SURF SCI, V287, P1025, DOI 10.1016/0039-6028(93)91120-E ZEGENHAGEN J, 1992, PHYS REV B, V46, P1860, DOI 10.1103/PhysRevB.46.1860 Zhang LX, 2005, PHYS REV B, V72, DOI 10.1103/PhysRevB.72.033315 Zhang YP, 2003, SURF SCI, V531, pL378, DOI 10.1016/S0039-6028(03)00545-4 Zhang YP, 2007, PHYS REV B, V75, DOI 10.1103/PhysRevB.75.073407 Zotov AV, 2008, SURF SCI, V602, P391, DOI 10.1016/j.susc.2007.10.032Saranin, A. A. Zotov, A. V. Utas, O. A. Kotlyar, V. G. Wei, C. M. Wang, Y. L.Russian Foundation for Basic Research [09-02-00094, 08-02-92000-nnc]Part of this work was supported by Russian Foundation for Basic Research (Grants Nos. 09-02-00094 and 08-02-92000-nnc).ELSEVIER SCIENCE BVAMSTERDAM</p>
},
	month = {Sep},
	pages = {2874-2878},
	type = {Article},
	abstract = {<p>Basing on the results of the scanning tunneling microscopy (STM) observations and density functional theory (DFT) calculations, the structural model for the Cu magic clusters formed on Si(1 1 1)7 x 7 surface has been proposed. Using STM, composition of the Cu magic clusters has been evaluated from the quantitative analysis of the Cu and Si mass transport occurring during magic cluster converting into the Si(1 1 1){\textquoteright}5.5 x 5.5{\textquoteright}-Cu reconstruction upon annealing. Evaluation yields that Cu magic cluster accommodates similar to 20 Cu atoms with similar to 20 Si atoms being expelled from the corresponding 7 x 7 half unit cell (HUC). In order to fit these values, it has been suggested that the Cu magic clusters resemble fragments of the Cu2Si-silicide monolayer incorporated into the rest-atom layer of the Si(1 1 1)7 x 7 HUCs. Using DFT calculations, stability of the nineteen models has been tested of which five models appeared to have formation energies lower than that of the original Si(1 1 1)7 x 7 surface. The three of five models having the lowest formation energies have been concluded to be the most plausible ones. They resemble well the evaluated composition and their counterparts are found in the experimental STM images. (C) 2009 Elsevier B.V. All rights reserved.</p>
},
	keywords = {and topography, Atom-solid interactions, ATOMIC-STRUCTURE, copper, CU/SI(111), DYNAMICS, GROWTH, morphology, roughness, Scanning tunneling microscopy (STM), Silicon, SURFACE, Surface structure, TOTAL-ENERGY CALCULATIONS, WAVE BASIS-SET},
	isbn = {0039-6028},
	url = {<Go to ISI>://WOS:000270640700008},
	author = {Saranin, A. A. and Zotov, A. V. and Utas, O. A. and Kotlyar, V. G. and Wei, C. M. and Wang, Y. L.}
}
