@article {548,
	title = {Interplay between adsorbed C-60 fullerenes and point defects on a Si(111)root 3 x root 3-In reconstructed surface},
	journal = {Surface Science},
	volume = {605},
	number = {23-24},
	year = {2011},
	note = {<p>ISI Document Delivery No.: 837EYTimes Cited: 1Cited Reference Count: 17Cited References: BEDROSSIAN P, 1990, NUCL INSTRUM METH B, V48, P296, DOI 10.1016/0168-583X(90)90126-F Felici R, 2005, NAT MATER, V4, P688, DOI 10.1038/nmat1456 HAMERS RJ, 1988, PHYS REV LETT, V60, P2527, DOI 10.1103/PhysRevLett.60.2527 Hibino H, 1996, PHYS REV B, V54, P5763, DOI 10.1103/PhysRevB.54.5763 KOHN W, 1965, PHYS REV, V140, P1133 Kresse G, 1996, COMP MATER SCI, V6, P15, DOI 10.1016/0927-0256(96)00008-0 KRESSE G, 1993, PHYS REV B, V47, P558, DOI 10.1103/PhysRevB.47.558 Kresse G, 1999, PHYS REV B, V59, P1758, DOI 10.1103/PhysRevB.59.1758 Li HI, 2009, PHYS REV LETT, V103, DOI 10.1103/PhysRevLett.103.056101 Owman F, 1996, SURF SCI, V359, P122, DOI 10.1016/0039-6028(96)00368-8 Perdew JP, 1996, PHYS REV LETT, V77, P3865, DOI 10.1103/PhysRevLett.77.3865 Saranin AA, 2006, PHYS REV B, V74, DOI 10.1103/PhysRevB.74.035436 Saranin AA, 1997, SURF SCI, V388, P299, DOI 10.1016/S0039-6028(97)00414-7 Saranin AA, 1997, PHYS REV B, V56, P7449, DOI 10.1103/PhysRevB.56.7449 Torrelles X, 2010, PHYS REV B, V81, DOI 10.1103/PhysRevB.81.041404 van Gastel R, 2000, NATURE, V408, P665, DOI 10.1038/35047156 van Gastel R, 2001, PHYS REV LETT, V86, P1562, DOI 10.1103/PhysRevLett.86.1562Gruznev, D. V. Matetskiy, A. V. Zotov, A. V. Saranin, A. A. Chou, J. P. Wei, C. M. Wang, Y. L.Russian Foundation for Basic Research [09-02-00094, 09-02-98500]; Russian Federal Agency for Science and Innovations [02.740.11.0111, 4634.2010.2]; National Science Council of Taiwan [97-2923-M001-003-MY3]Part of this work was supported by the Russian Foundation for Basic Research (Grant Nos. 09-02-00094 and 09-02-98500), and the Russian Federal Agency for Science and Innovations (Grant Nos. 02.740.11.0111 and 4634.2010.2), and the National Science Council of Taiwan (Grant No. 97-2923-M001-003-MY3).ELSEVIER SCIENCE BVAMSTERDAM</p>
},
	month = {Dec},
	pages = {2050-2054},
	type = {Article},
	abstract = {<p>Adsorption of C-60 onto Si(111)root 3 x root 3-In surface presents a fascinating example of interplay between molecular adsorbate and surface structural defects. It has been found that adsorbing C-60 molecules are trapped by the substitutional Si-defects. In turn, the group of a few adsorbed C-60 can act as a trap for the mobile vacancies of the root 3 x root 3-In reconstruction. Namely, adsorbed C-60 induces a strain in the indium layer, and when a mobile vacancy happens to get into the surface area surrounded by fullerenes, the In atoms between the C-60 and the vacancy shift from the T-4 to the H-3 sites, fixing a vacancy in a given location. (C) 2011 Elsevier B.V. All rights reserved.</p>
},
	keywords = {ADSORPTION, Atom-solid interactions, ATOMS, DIFFUSION, Fullerence, Indium, METALS, ROOT 3-IN SURFACE, Scanning tunneling microscopy (STM), Silicon, STM, Surface structure},
	isbn = {0039-6028},
	url = {<Go to ISI>://WOS:000296175100019},
	author = {Gruznev, D. V. and Matetskiy, A. V. and Zotov, A. V. and Saranin, A. A. and Chou, J. P. and Wei, C. M. and Wang, Y. L.}
}
