Publications

Export 7 results:
Sort by: [ Author (Asc)] Title Type Year
A B C D E F G H I J K L [M] N O P Q R S T U V W X Y Z   [Show ALL]
M
Matetskiy, V, A., Denisov, V N., Hsing C. R., Wei C. M., Zotov, V A., & Saranin A. A. (2019).  Observation of the nesting and defect-driven 1D incommensurate charge density waves phase in the 2D system. JOURNAL OF PHYSICS-CONDENSED MATTER. 31, 115402., {MAR 20}, Number {11} Abstract

n/a

Matetskiy, A. V., Bondarenko L. V., Gruznev D. V., Zotov A. V., Saranin A. A., Chou J. P., Hsing C. R., Wei C. M., & Wang Y. L. (2013).  Peculiar diffusion of C-60 on In-adsorbed Si(111)root 3 x root 3-Au surface. SURFACE SCIENCE. 616, 44-50., {OCT} Abstract

n/a

Mihalyuk, A. N., Hsing C. R., Wei C. M., Gruznev D. V., Bondarenko L. V., Tupchaya A. Y., Zotov A. V., & Saranin A. A. (2017).  One-atom-layer 4x4 compound in (Tl, Pb)/Si(111) system. SURFACE SCIENCE. 657, 63-68., {MAR} Abstract

n/a

Mihalyuk, A. N., Alekseev A. A., Hsing C. R., Wei C. M., Gruznev D. V., Bondarenko L. V., Matetskiy A. V., Tupchaya A. Y., Zotov A. V., & Saranin A. A. (2016).  Low-temperature one-atom-layer root 7 x root 7-In phase on Si(111). SURFACE SCIENCE. 649, 14-19., {JUL} Abstract

n/a

Mihalyuk, A. N., Hsing C. R., Wei C. M., Eremeev S. V., Bondarenko L. V., Tupchaya A. Y., Gruznev D. V., Zotov A. V., & Saranin A. A. (2018).  (Tl, Au)/Si(111)root 7 x root 7 2D compound: an ordered array of identical Au clusters embedded in Tl matrix. JOURNAL OF PHYSICS-CONDENSED MATTER. 30, 025002., {JAN 17}, Number {2} Abstract

n/a

Miskovsky, N. M., Wei C. M., & Tsong T. T. (1992).  FIELD EVAPORATION OF SILICON IN THE FIELD-ION MICROSCOPE AND SCANNING TUNNELING MICROSCOPE CONFIGURATIONS. Physical Review Letters. 69, 2427-2430., Oct, Number 16 AbstractWebsite

Field evaporation of silicon as positive and negative ions in the field ion microscope and scanning tunneling microscope configurations is investigated with the charge-exchange model using atomic potentials from an empirical potential due to Tersoff [Phys. Rev. B 37, 6991 (1988)] and an environment dependent potential developed by Bolding and Andersen [Phys. Rev. B 41, 10568 (1990)]. For the geometry of the field ion microscope, Si+ should be the observable ion species. In the close-spaced electrode geometry of the scanning tunneling microscope, Si2- should be the favored ion species since it requires the lowest evaporation field.

Miyata, N., Horikoshi K., Hirahara T., Hasegawa S., Wei C. M., & Matsuda I. (2008).  Electronic transport properties of quantum-well states in ultrathin Pb (111) films. Physical Review B. 78, 6., Dec, Number 24 AbstractWebsite

Electrical conduction mechanism in ultrathin Pb (111) films formed on the Si(111)root 3x root 3-Pb surface has been investigated by means of in situ conductivity measurements, angle-resolved photoemission spectroscopy, and first-principles calculations. To investigate the origin of the bilayer oscillation observed in the present conductivity measurement, we perform some simulations based on the calculated band structure. They reveal that the density of states near the Fermi level cannot explain the bilayer oscillation, therefore, exclusively assigning it to the relaxation time. Surface roughness during the bilayer film growth seems to play a crucial role in the bilayer oscillation of the relaxation time.