Gross, A., Wei C. M., & Scheffler M.
(1998).
Poisoning of hydrogen dissociation at Pd (100) by adsorbed sulfur studied by ab-initio quantum dynamics and ab-initio molecular dynamics.
Surface Science. 416, L1095-L1100., Oct, Number 1-2
AbstractWe report calculations of the dissociative adsorption of H-2 at Pd (100) covered with 1/4 monolayer of sulfur using quantum dynamics as well as molecular dynamics and taking all six degrees of freedom of the two H atoms fully into account. The ab-initio potential-energy surface (PES) is found to be very strongly corrugated. In particular, we discuss the influence of tunneling, zero-point vibrations due to the localization of the wave function of the nuclei when narrow valleys of the PES are passed, steering of the approaching H-2 molecules towards low-energy barrier configurations, and the important role of subsurface absorbates for the hydrogen dissociation. It is shown that "established" concepts derived from low-dimensional dynamical studies are not necessarily valid in a high-dimensional treatment. (C) 1998 Elsevier Science B.V. All rights reserved.
Gruznev, D. V., Bondarenko L. V., Matetskiy A. V., Tupchaya A. Y., Chukurov E. N., Hsing C. R., Wei C. M., Eremeev S. V., Zotov A. V., & Saranin A. A.
(2015).
Atomic structure and electronic properties of the two-dimensional (Au, Al)/Si(111)2 x 2 compound.
PHYSICAL REVIEW B. 92, 245407., {DEC 7}, Number {24}
Abstract
Gruznev, D. V., Matetskiy A. V., Zotov A. V., Saranin A. A., Chou J. P., Wei C. M., & Wang Y. L.
(2011).
Interplay between adsorbed C-60 fullerenes and point defects on a Si(111)root 3 x root 3-In reconstructed surface.
Surface Science. 605, 2050-2054., Dec, Number 23-24
AbstractAdsorption of C-60 onto Si(111)root 3 x root 3-In surface presents a fascinating example of interplay between molecular adsorbate and surface structural defects. It has been found that adsorbing C-60 molecules are trapped by the substitutional Si-defects. In turn, the group of a few adsorbed C-60 can act as a trap for the mobile vacancies of the root 3 x root 3-In reconstruction. Namely, adsorbed C-60 induces a strain in the indium layer, and when a mobile vacancy happens to get into the surface area surrounded by fullerenes, the In atoms between the C-60 and the vacancy shift from the T-4 to the H-3 sites, fixing a vacancy in a given location. (C) 2011 Elsevier B.V. All rights reserved.
Gruznev, D. V., Bondarenko L. V., Y. T. A., Eremeev S. V., Mihalyuk A. N., Chou J. P., Wei C. M., Zotov A. V., & Saranin A. A.
(2017).
2D Tl-Pb compounds on Ge(111) surface: atomic arrangement and electronic band structure.
JOURNAL OF PHYSICS-CONDENSED MATTER. 29, 035001., {JAN 25}, Number {3}
Abstract