Wei-ChaoChen, Cheng-YingChen, Lin Y-R, Chang J-K, Chen C-H, Chiu Y-P, Wu C-I, Chen K-H, Chen L-C.
2019.
Interface engineering of CdS/CZTSSe heterojunctions for enhancing the Cu2ZnSn(S,Se)4 solar cell efficiency. Materials Today Energy. 13:256-266.
AbstractInterface engineering of CdS/CZTS(Se) is an important aspect of improving the performance of buffer/absorber heterojunction combination. It has been demonstrated that the crossover phenomenon due to the interface recombination can be drastically eliminated by interface modification. Therefore, in-depth studies across the CdS/CZTS(Se) junction properties, as well as effective optimization processes, are very crucial for achieving high-efficiency CZTSSe solar cells. Here, we present a comprehensive study on the effects of soft-baking (SB) temperature on the junction properties and the corresponding optoelectronic and interface-structural properties. Based on in-depth photoemission studies corroborated with structural and composition analysis, we concluded that interdiffusion and intermixing of CZTSSe and CdS phases occurred on the Cu-poor surface of CZTSSe at elevated SB temperatures, and the interface dipole moments induced by electrostatic potential fluctuation were thus significantly eliminated. In contrast, with low SB temperature, the CdS/CZTSSe heterojunction revealed very sharp interface with very short interdiffusion, forming interface dipole moments and drastically deteriorating device performance. These post thermal treatments also significantly suppress defect energy level of interface measured by admittance spectroscopy from 294 to 109 meV due to CdS/CZTSSe interdiffusion. Meanwhile, the interdiffusion effects on the shift of valence band maximum, conduction band minimum and band offset across the heterojunction of thermally treated CdS/CZTSSe interface are spatially resolved at the atomic scale by measuring the local density of states with cross-sectional scanning tunneling microscopy and spectroscopy. A significant enhancement in the power conversion efficiency from 4.88% to 8.48% is achieved by a facile interface engineering process allowing a sufficient intermixing of CdS/Cd and CZTSSe/Se phases without detrimental recombination centers.
Shit, SC, Shown I, Paul R, Chen K-H, Mondal J, Chen L-C.
2020.
Integrated nano-architectured photocatalysts for photochemical CO2 reduction, 2020. Nanoscale. 12(46):23301-23332.: The Royal Society of Chemistry
AbstractRecent advances in nanotechnology, especially the development of integrated nanostructured materials, have offered unprecedented opportunities for photocatalytic CO2 reduction. Compared to bulk semiconductor photocatalysts, most of these nanostructured photocatalysts offer at least one advantage in areas such as photogenerated carrier kinetics, light absorption, and active surface area, supporting improved photochemical reaction efficiencies. In this review, we briefly cover the cutting-edge research activities in the area of integrated nanostructured catalysts for photochemical CO2 reduction, including aqueous and gas-phase reactions. Primarily explored are the basic principles of tailor-made nanostructured composite photocatalysts and how nanostructuring influences photochemical performance. Specifically, we summarize the recent developments related to integrated nanostructured materials for photocatalytic CO2 reduction, mainly in the following five categories: carbon-based nano-architectures, metal–organic frameworks, covalent-organic frameworks, conjugated porous polymers, and layered double hydroxide-based inorganic hybrids. Besides the technical aspects of nanostructure-enhanced catalytic performance in photochemical CO2 reduction, some future research trends and promising strategies are addressed.
Rajeev Gandhi, J, Nehru R, Chen S-M, Sankar R, Bayikadi KS, Sureshkumar P, Chen K-H, Chen L-C.
2018.
Influence of GeP precipitates on the thermoelectric properties of P-type GeTe and Ge0.9−xPxSb0.1Te compounds, 2018. CrystEngComm. 20(41):6449-6457.: The Royal Society of Chemistry
AbstractGermanium telluride (GeTe) is a very well known IV–VI group semiconducting material with the advantageous property of showing metallic conduction, which materializes from its superior carrier concentration (n) (high number of Ge vacancies). A systematic investigation into the thermoelectric properties (TEP) of GeTe was reported by way of carrier concentration (n) engineering. The present investigation focuses on studying the effects of doping (antimony – Sb) and co-doping (phosphorus – P) on the TEP of GeTe. In order to understand the system, we have prepared p-type GeTe and Ge0.9−xPxSb0.1Te (x = 0, 0.01, 0.03, or 0.05) samples via a non-equilibrium solid state melt quenching (MQ) process, followed by hot press consolidation. Temperature dependent synchrotron X-ray diffraction studies reveal a phase transition from rhombohedral to simple cubic in the Ge0.9−xPxSb0.1Te system at 573 K, which is clearly reflected in the TEP. Further high resolution transmission electron microscopy (HRTEM) studies reveal the pseudo-cubic nature of the sample. However, powder X-ray diffraction (PXRD) and field emission scanning electron microscopy (FESEM) images and energy dispersive X-ray spectroscopy (EDX) studies confirm the presence of germanium phosphide (GeP) in all P-doped samples. The presence of a secondary phase and point defects (Sb & P) enhanced the additional scattering effects in the system, which influenced the Seebeck coefficient and thermal conductivity of GeTe. A significant enhancement in the Seebeck coefficient (S) to ∼225 μV K−1 and a drastic reduction in thermal conductivity (κ) to ∼1.2 W mK−1 effectively enhanced the figure-of-merit (ZT) to ∼1.72 at 773 K for Ge0.87P0.03Sb0.1Te, which is a ∼3 fold increase for GeTe. Finally, P co-doped Ge0.9Sb0.1Te demonstrates an enhancement in ZT, making it a good candidate material for power generation applications.
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