<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bayikadi, Khasim Saheb</style></author><author><style face="normal" font="default" size="100%">Imam, Safdar</style></author><author><style face="normal" font="default" size="100%">Ubaid, Mohammad</style></author><author><style face="normal" font="default" size="100%">Aziz, Anver</style></author><author><style face="normal" font="default" size="100%">Kuei-Hsien Chen</style></author><author><style face="normal" font="default" size="100%">Raman Sankar</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effect of aliovalent substituted highly disordered GeTe compound's thermoelectric performance</style></title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Atomic disorder</style></keyword><keyword><style  face="normal" font="default" size="100%">Doping optimization</style></keyword><keyword><style  face="normal" font="default" size="100%">Figure of merit</style></keyword><keyword><style  face="normal" font="default" size="100%">thermal conductivity</style></keyword><keyword><style  face="normal" font="default" size="100%">Vacancy control</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2022</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2022</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/pii/S0925838822026123</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">922</style></volume><pages><style face="normal" font="default" size="100%">166221</style></pages><isbn><style face="normal" font="default" size="100%">0925-8388</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;As a lead-free high-performance thermoelectric material, germanium telluride (GeTe) has recently been extensively studied for mid-temperature (500–800 K) applications. The carrier concentration and the thermal conductivity are reduced for vacancy-controlled GeTe compounds compared with pristine GeTe. We explored and optimized the Ge0.9−xSb0.1PxTe (x = 0.01–0.05) material's highest thermoelectric performance at elevated temperatures. Intrinsic Ge vacancy control and manipulation of Ge (+2) with Sb/P (+3) increased the charge contribution to power factor improvement to ∼42 µWcm−1 K−2 while minimizing the lattice thermal contribution to ∼0.4 W/mK. This resulted in an increase in thermoelectric performance of ∼2.4 @ 773 K for the Ge0.88Sb0.1P0.02Te sample. The inclusion of atomically disordered Sb/P ions considerably increases the scattering effects caused by the point defect, whereas stretched grain boundaries reveal the decreased lattice thermal contribution. The current work demonstrates the effectiveness of phosphorus as a co-dopant in increasing the average thermoelectric performance (ZTavg) value over the GeTe operating temperature range.&lt;/p&gt;
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