<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Shelke, Abhijeet R.</style></author><author><style face="normal" font="default" size="100%">Wang, Hsiao-Tsu</style></author><author><style face="normal" font="default" size="100%">Chiou, Jau-Wern</style></author><author><style face="normal" font="default" size="100%">Indrajit Shown</style></author><author><style face="normal" font="default" size="100%">Sabbah, Amr</style></author><author><style face="normal" font="default" size="100%">Chen, Kuang-Hung</style></author><author><style face="normal" font="default" size="100%">Teng, Shu-Ang</style></author><author><style face="normal" font="default" size="100%">Lin, I-An</style></author><author><style face="normal" font="default" size="100%">Lee, Chi-Cheng</style></author><author><style face="normal" font="default" size="100%">Hsueh, Hung-Chung</style></author><author><style face="normal" font="default" size="100%">Liang, Yu-Hui</style></author><author><style face="normal" font="default" size="100%">Du, Chao-Hung</style></author><author><style face="normal" font="default" size="100%">Yadav, Priyanka L.</style></author><author><style face="normal" font="default" size="100%">Ray, Sekhar C.</style></author><author><style face="normal" font="default" size="100%">Hsieh, Shang-Hsien</style></author><author><style face="normal" font="default" size="100%">Pao, Chih-Wen</style></author><author><style face="normal" font="default" size="100%">Tsai, Huang-Ming</style></author><author><style face="normal" font="default" size="100%">Chen, Chia-Hao</style></author><author><style face="normal" font="default" size="100%">Kuei-Hsien Chen</style></author><author><style face="normal" font="default" size="100%">Li-Chyong Chen</style></author><author><style face="normal" font="default" size="100%">Pong, Way-Faung</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Bandgap Shrinkage and Charge Transfer in 2D Layered SnS2 Doped with V for Photocatalytic Efficiency Improvement</style></title><secondary-title><style face="normal" font="default" size="100%">Small</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">band-gap shrinkage</style></keyword><keyword><style  face="normal" font="default" size="100%">charge transfer</style></keyword><keyword><style  face="normal" font="default" size="100%">Density functional theory</style></keyword><keyword><style  face="normal" font="default" size="100%">resonant inelastic X-ray scattering</style></keyword><keyword><style  face="normal" font="default" size="100%">V-doped 2D layered SnS2</style></keyword><keyword><style  face="normal" font="default" size="100%">X-ray absorption</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2022</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://onlinelibrary.wiley.com/doi/abs/10.1002/smll.202105076</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">n/a</style></number><volume><style face="normal" font="default" size="100%">n/a</style></volume><pages><style face="normal" font="default" size="100%">2105076</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Abstract Effects of electronic and atomic structures of V-doped 2D layered SnS2 are studied using X-ray spectroscopy for the development of photocatalytic/photovoltaic applications. Extended X-ray absorption fine structure measurements at V K-edge reveal the presence of VO and VS bonds which form the intercalation of tetrahedral OVS sites in the van der Waals (vdW) gap of SnS2 layers. X-ray absorption near-edge structure (XANES) reveals not only valence state of V dopant in SnS2 is ≈4+ but also the charge transfer (CT) from V to ligands, supported by V Lα,β resonant inelastic X-ray scattering. These results suggest V doping produces extra interlayer covalent interactions and additional conducting channels, which increase the electronic conductivity and CT. This gives rapid transport of photo-excited electrons and effective carrier separation in layered SnS2. Additionally, valence-band photoemission spectra and S K-edge XANES indicate that the density of states near/at valence-band maximum is shifted to lower binding energy in V-doped SnS2 compare to pristine SnS2 and exhibits band gap shrinkage. These findings support first-principles density functional theory calculations of the interstitially tetrahedral OVS site intercalated in the vdW gap, highlighting the CT from V to ligands in V-doped SnS2.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;n/a&lt;/p&gt;
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