<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Chang, Ming-Chiang</style></author><author><style face="normal" font="default" size="100%">Po-Hsun Ho</style></author><author><style face="normal" font="default" size="100%">Tseng, Mao-Feng</style></author><author><style face="normal" font="default" size="100%">Lin, Fang-Yuan</style></author><author><style face="normal" font="default" size="100%">Hou, Cheng-Hung</style></author><author><style face="normal" font="default" size="100%">Lin, I-Kuan</style></author><author><style face="normal" font="default" size="100%">Wang, Hsin</style></author><author><style face="normal" font="default" size="100%">Huang, Pin-Pin</style></author><author><style face="normal" font="default" size="100%">Chiang, Chun-Hao</style></author><author><style face="normal" font="default" size="100%">Yang, Yueh-Chiang</style></author><author><style face="normal" font="default" size="100%">Wang, I-Ta</style></author><author><style face="normal" font="default" size="100%">He-Yun Du</style></author><author><style face="normal" font="default" size="100%">Wen, Cheng-Yen</style></author><author><style face="normal" font="default" size="100%">Jing-Jong Shyue</style></author><author><style face="normal" font="default" size="100%">Chun-Wei Chen</style></author><author><style face="normal" font="default" size="100%">Kuei-Hsien Chen</style></author><author><style face="normal" font="default" size="100%">Chiu, Po-Wen</style></author><author><style face="normal" font="default" size="100%">Li-Chyong Chen</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2020</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2020</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://doi.org/10.1038/s41467-020-17517-6</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">11</style></volume><pages><style face="normal" font="default" size="100%">3682</style></pages><isbn><style face="normal" font="default" size="100%">2041-1723</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Most chemical vapor deposition methods for transition metal dichalcogenides use an extremely small amount of precursor to render large single-crystal flakes, which usually causes low coverage of the materials on the substrate. In this study, a self-capping vapor-liquid-solid reaction is proposed to fabricate large-grain, continuous MoS2 films. An intermediate liquid phase-Na2Mo2O7 is formed through a eutectic reaction of MoO3 and NaF, followed by being sulfurized into MoS2. The as-formed MoS2 seeds function as a capping layer that reduces the nucleation density and promotes lateral growth. By tuning the driving force of the reaction, large mono/bilayer (1.1 mm/200 μm) flakes or full-coverage films (with a record-high average grain size of 450 μm) can be grown on centimeter-scale substrates. The field-effect transistors fabricated from the full-coverage films show high mobility (33 and 49 cm2 V−1 s−1 for the mono and bilayer regions) and on/off ratio (1 ~ 5 × 108) across a 1.5 cm × 1.5 cm region.&lt;/p&gt;
</style></abstract><issue><style face="normal" font="default" size="100%">1</style></issue><notes><style face="normal" font="default" size="100%">n/a</style></notes></record></records></xml>