<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Rajeev Gandhi, J.</style></author><author><style face="normal" font="default" size="100%">Nehru, Raja</style></author><author><style face="normal" font="default" size="100%">Chen, Sheng-Ming</style></author><author><style face="normal" font="default" size="100%">Raman Sankar</style></author><author><style face="normal" font="default" size="100%">Bayikadi, Khasim Saheb</style></author><author><style face="normal" font="default" size="100%">Sureshkumar, Palanivel</style></author><author><style face="normal" font="default" size="100%">Kuei-Hsien Chen</style></author><author><style face="normal" font="default" size="100%">Li-Chyong Chen</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Influence of GeP precipitates on the thermoelectric properties of P-type GeTe and Ge0.9−xPxSb0.1Te compounds</style></title><secondary-title><style face="normal" font="default" size="100%">CrystEngComm</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2018</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://dx.doi.org/10.1039/C8CE01134F</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">The Royal Society of Chemistry</style></publisher><volume><style face="normal" font="default" size="100%">20</style></volume><pages><style face="normal" font="default" size="100%">6449 - 6457</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Germanium telluride (GeTe) is a very well known IV–VI group semiconducting material with the advantageous property of showing metallic conduction, which materializes from its superior carrier concentration (n) (high number of Ge vacancies). A systematic investigation into the thermoelectric properties (TEP) of GeTe was reported by way of carrier concentration (n) engineering. The present investigation focuses on studying the effects of doping (antimony – Sb) and co-doping (phosphorus – P) on the TEP of GeTe. In order to understand the system, we have prepared p-type GeTe and Ge0.9−xPxSb0.1Te (x = 0, 0.01, 0.03, or 0.05) samples via a non-equilibrium solid state melt quenching (MQ) process, followed by hot press consolidation. Temperature dependent synchrotron X-ray diffraction studies reveal a phase transition from rhombohedral to simple cubic in the Ge0.9−xPxSb0.1Te system at 573 K, which is clearly reflected in the TEP. Further high resolution transmission electron microscopy (HRTEM) studies reveal the pseudo-cubic nature of the sample. However, powder X-ray diffraction (PXRD) and field emission scanning electron microscopy (FESEM) images and energy dispersive X-ray spectroscopy (EDX) studies confirm the presence of germanium phosphide (GeP) in all P-doped samples. The presence of a secondary phase and point defects (Sb &amp;amp; P) enhanced the additional scattering effects in the system, which influenced the Seebeck coefficient and thermal conductivity of GeTe. A significant enhancement in the Seebeck coefficient (S) to ∼225 μV K−1 and a drastic reduction in thermal conductivity (κ) to ∼1.2 W mK−1 effectively enhanced the figure-of-merit (ZT) to ∼1.72 at 773 K for Ge0.87P0.03Sb0.1Te, which is a ∼3 fold increase for GeTe. Finally, P co-doped Ge0.9Sb0.1Te demonstrates an enhancement in ZT, making it a good candidate material for power generation applications.&lt;/p&gt;
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