<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">C. L. Hsiao</style></author><author><style face="normal" font="default" size="100%">T. W. Liu</style></author><author><style face="normal" font="default" size="100%">C. T. Wu</style></author><author><style face="normal" font="default" size="100%">H. C. Hsu</style></author><author><style face="normal" font="default" size="100%">L.C. Chen*</style></author><author><style face="normal" font="default" size="100%">W.Y. Hsiao</style></author><author><style face="normal" font="default" size="100%">C.C. Yang</style></author><author><style face="normal" font="default" size="100%">A. Gällström</style></author><author><style face="normal" font="default" size="100%">P. Holtz</style></author><author><style face="normal" font="default" size="100%">G. M. Hsu</style></author><author><style face="normal" font="default" size="100%">K.H. Chen*</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment</style></title><secondary-title><style face="normal" font="default" size="100%">Appl. Phys. Lett.</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2008</style></year></dates><volume><style face="normal" font="default" size="100%">92</style></volume><pages><style face="normal" font="default" size="100%">111914</style></pages></record></records></xml>