<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Chang, C. Y.</style></author><author><style face="normal" font="default" size="100%">G. C. Chi</style></author><author><style face="normal" font="default" size="100%">W. M. Wang</style></author><author><style face="normal" font="default" size="100%">L.C. Chen*</style></author><author><style face="normal" font="default" size="100%">K. H. Chen</style></author><author><style face="normal" font="default" size="100%">F. Ren</style></author><author><style face="normal" font="default" size="100%">S. J. Pearton</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Electrical transport properties of single GaN and InN nanowires</style></title><secondary-title><style face="normal" font="default" size="100%">J. Electronic Materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2006</style></year></dates><volume><style face="normal" font="default" size="100%">35</style></volume><pages><style face="normal" font="default" size="100%">738-743</style></pages></record></records></xml>