<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">L. C. Chen</style></author><author><style face="normal" font="default" size="100%">C.K. Chen</style></author><author><style face="normal" font="default" size="100%">D. M. Bhusari</style></author><author><style face="normal" font="default" size="100%">K. H. Chen</style></author><author><style face="normal" font="default" size="100%">S.L. Wei</style></author><author><style face="normal" font="default" size="100%">Y.F. Chen</style></author><author><style face="normal" font="default" size="100%">Y.C. Jong</style></author><author><style face="normal" font="default" size="100%">D.Y. Lin</style></author><author><style face="normal" font="default" size="100%">C.F. Li</style></author><author><style face="normal" font="default" size="100%">Y.S. Huang</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Growth of Ternary Silicon Carbon Nitride as a New Wide Band Gap Material</style></title><secondary-title><style face="normal" font="default" size="100%">MRS Symp.</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1997</style></year></dates><pages><style face="normal" font="default" size="100%">Vol. 468, 31</style></pages></record></records></xml>