@article {4450,
	title = {Effect of aliovalent substituted highly disordered GeTe compound{\textquoteright}s thermoelectric performance},
	volume = {922},
	year = {2022},
	note = {n/a},
	month = {2022},
	pages = {166221},
	abstract = {<p>As a lead-free high-performance thermoelectric material, germanium telluride (GeTe) has recently been extensively studied for mid-temperature (500{\textendash}800~K) applications. The carrier concentration and the thermal conductivity are reduced for vacancy-controlled GeTe compounds compared with pristine GeTe. We explored and optimized the Ge0.9-xSb0.1PxTe (x~=~0.01{\textendash}0.05) material{\textquoteright}s highest thermoelectric performance at elevated temperatures. Intrinsic Ge vacancy control and manipulation of Ge (+2) with Sb/P (+3) increased the charge contribution to power factor improvement to \~{}42 {\textmu}Wcm-1 K-2 while minimizing the lattice thermal contribution to \~{}0.4~W/mK. This resulted in an increase in thermoelectric performance of \~{}2.4~@~773~K for the Ge0.88Sb0.1P0.02Te sample. The inclusion of atomically disordered Sb/P ions considerably increases the scattering effects caused by the point defect, whereas stretched grain boundaries reveal the decreased lattice thermal contribution. The current work demonstrates the effectiveness of phosphorus as a co-dopant in increasing the average thermoelectric performance (ZTavg) value over the GeTe operating temperature range.</p>
},
	keywords = {Atomic disorder, Doping optimization, Figure of merit, thermal conductivity, Vacancy control},
	isbn = {0925-8388},
	url = {https://www.sciencedirect.com/science/article/pii/S0925838822026123},
	author = {Bayikadi, Khasim Saheb and Imam, Safdar and Ubaid, Mohammad and Aziz, Anver and Kuei-Hsien Chen and Raman Sankar}
}
