@article {4127,
	title = {Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method},
	volume = {11},
	year = {2020},
	note = {n/a},
	month = {2020},
	pages = {3682},
	abstract = {<p>Most chemical vapor deposition methods for transition metal dichalcogenides use an extremely small amount of precursor to render large single-crystal flakes, which usually causes low coverage of the materials on the substrate. In this study, a self-capping vapor-liquid-solid reaction is proposed to fabricate large-grain, continuous MoS2 films. An intermediate liquid phase-Na2Mo2O7 is formed through a eutectic reaction of MoO3 and NaF, followed by being sulfurized into MoS2. The as-formed MoS2 seeds function as a capping layer that reduces the nucleation density and promotes lateral growth. By tuning the driving force of the reaction, large mono/bilayer (1.1 mm/200 μm) flakes or full-coverage films (with a record-high average grain size of 450 μm) can be grown on centimeter-scale substrates. The field-effect transistors fabricated from the full-coverage films show high mobility (33 and 49 cm2 V-1 s-1 for the mono and bilayer regions) and on/off ratio (1 ~ 5 {\texttimes} 108) across a 1.5 cm {\texttimes} 1.5 cm region.</p>
},
	isbn = {2041-1723},
	url = {https://doi.org/10.1038/s41467-020-17517-6},
	author = {Chang, Ming-Chiang and Po-Hsun Ho and Tseng, Mao-Feng and Lin, Fang-Yuan and Hou, Cheng-Hung and Lin, I-Kuan and Wang, Hsin and Huang, Pin-Pin and Chiang, Chun-Hao and Yang, Yueh-Chiang and Wang, I-Ta and He-Yun Du and Wen, Cheng-Yen and Jing-Jong Shyue and Chun-Wei Chen and Kuei-Hsien Chen and Chiu, Po-Wen and Li-Chyong Chen}
}
