Publications

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1988
J. Wang, K.H. Chen, ME.  1988.  Energy Llocalization in Infrared Multiphoton Excited CF2Cl2 Studied by Time Resolved Raman Spectroscopy. Int. Conf. Quantum Electronics. :496., Tokyo Japan: Tech. Digest
1995
Chen, KH, Wu JY, Chen LC, Juan CC, Hsu T.  1995.  Epitaxial Growth of Diamond Films for Electronic Applications. the 188th Meeting of the Electrochemical Society. :Vol95-21,p55-69., Chicago
1996
Chen, LC, Juan CC, Wu JY, Chen KH, Teng JW.  1996.  On the Optimized Nucleation of Near-Single-Crystal CVD Diamond Film. MRS Symp.. :Vol.416,81.
1997
Chen, LC, Chen CK, Bhusari DM, Chen KH, Wei SL, Chen YF, Jong YC, Lin DY, Li CF, Huang YS.  1997.  Growth of Ternary Silicon Carbon Nitride as a New Wide Band Gap Material. MRS Symp.. :Vol.468,31.
Lin, DY, Li CF, Huang YS, Jong YC, Chen YF, Chen LC, Chen CK, Chen KH, Bhusari DM.  1997.  Temperature dependence of direct band gap of Si-containing carbon nitride crystalline films. Phys. Rev. B. 56:6498-6501.
1998
Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline silicon carbon nitride: a wide band gap semiconductor. Appl. Phys. Lett.. 72:2463-2465.
Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline Silicon Carbon Nitride: A Wide Band Gap Semiconductor. Appl. Phys. Lett.. 72:2463.
2001
and H.M. Tsai, Jan CJ, Chiou JW, Pong* WF, Chen KH, et al.  2001.  Electronic and bonding structures of amorphous Si-C-N thin films by X-ray-absorption spectroscopy. Appl. Phys. Lett.. 79:2393-2395.
Yeh, CL, Jan CJ, Chiou JW, Pong* WF, Tsai MH, Chang YK, Chen YY, Lee JF, Tseng PK, Wei SL, Wen CY, Chen LC, Chen KH.  2001.  Electronic structure of the Fe-layer catalyzed carbon nanotubes studies by X-ray-absorption spectroscopy. Appl. Phys. Lett.. 79:3179-3181.
2002
Das*, D, Jana M, Barua AK, Chattopadhyay S, Chen LC, Chen KH.  2002.  Electrical, thermal and structural properties of microcrystalline Si thin films. Jpn.Appl. Phys. Lett.. 41:L229-232.
Chiou, JW, Yueh CL, Jan JC, Tsai HM, Pong* WF, Hong IH, Klauser R, Tsai MH, Chang YK, Chen YY, Wu CT, Chen KH, Wei SL, Wen CY, Chen LC, Chuang TJ.  2002.  Electronic structure at the carbon nanotube tips studied by X-ray-absorption spectroscopy and scanning photoelectron microscopy. Appl. Phys. Lett.. 81:4189-4191.
2003
Chiou, JW, Jan JC, Tsai HM, Pong* WF, Tsai MH, Hong IH, Klauser R, Lee JF, Hsu CW, Lin HM, Chen CC, Shen CH, Chen LC, Chen KH.  2003.  Electronic structure of GaN nanowire studied by X-ray-absorption spectroscopy and scanning photoelectron microscopy. Appl. Phys. Lett.. 82:3949-3951.
2004
Ray, SC, Tsai HM, Bao CW, Chiou JW, Jan JC, Kumar K, Pong* WF, Tsai M-H, Chattopadhyay S, Chen LC, Chien SC, Lee MT, Lin ST, Chen KH.  2004.  Electronic and bonding structures of B-C-N thin films by X-ray absorption and photoemission spectroscopy. J. Appl. Phys. . 96:208-211.
Chen, CH, Chen YF, Lan ZH, Chen LC, Chen KH, Jiang HX, Lin JY.  2004.  Mechanism of enhanced luminescence in InxAlyGa1–x–yN quaternary epilayers. Appl. Phys. Lett.. 84:1480-1482.
S.C. Ray, Tsai HM, Chiou JW, Jan JC, Kumar K, Pong* WF, Chien FZ, Tsai M-H, Chattopadhyay S, Chen LC, Chien SC, Lee MT, Lin ST, Chen KH.  2004.  X-Ray absorption studies of boron–carbon–nitrogen (BxCyNz ) ternary. Diamond & Related Mater.. 13:1553-1557.
2005
Juan, CP, Tsai CC, Chen KH, Chen LC, Cheng HC.  2005.  Effects of high-density oxygen plasma post-treatment on field emission properties of carbon nanotube field-emission displays. Jpn. J. Appl. Phys.. 44:8231-8236.
Juan, CP, Tsai CC, Chen KH, Chen LC, Cheng HC.  2005.  Fabrication and characterization of lateral field emission device based on carbon nanotubes. Jpn. J. Appl. Phys.. 44:2612-2617.
Juan, CP, Chen* KH, et al.  2005.  Improved field-emission properties of carbon nanotube field-emission arrays by controlled density growth of carbon nanotubes. Jap. J. of Appl. Phys.. 44:365-370.
2006
Chang, CY, Lan TW, Chi GC, Chen* LC, Chen KH, Chen JJ, Jang S, Ren F, Pearton SJ.  2006.  Effect of ozone cleaning and annealing on Ti/Al/Pt/Au ohmic contacts on GaN nanowires. Electrochemical and Solid-State Lett.. 9:G155-G157.
2007
Jana, D, Chen LC, Chen CW, Chattopadhyay S, Chen KH.  2007.  A first principles study of the optical properties of BxCy single wall nanotubes. Carbon. 45:1482-1491.
Huang, YF, Chattopadhyay S, Jen YJ, Peng CY, Liu TA, Hsu YK, Pan CL, Lo HC, Hsu CH, Chang YH, Lee CS, Chen KH, Chen LC.  2007.  Improved broadband, and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures. Nature Nanotechnology. 2:770-774.
2009
Hsieh, YP, Chen HY, Lin MZ, Shiu SC, Hofmann M, Chern MY, Jia X, Yang YJ, Chang HJ, Huang HM, Tseng SC, Chen* LC, Chen KH, Lin CF, Liang* CT, Chen YF.  2009.  Electroluminescence from ZnO/Si-nanotips light emitting diodes. Nano Letters. 9:1839.
Jana*, D, Chakraborti A, Chen LC, Chen CW, Chen KH.  2009.  A first principles study of the optical properties of CxNy single walled nanotubes. Nanotechnology. 20:175701.
Das, CR, Dhara S, Hsu HC, Chen LC, Jeng YR, Bhaduri AK, Raj B, Chen KH, Albert SK.  2009.  Mechanism of recrystallization process in epitaxial GaN under dynamic stress field : Atomistic origin of planar defect formation. J. Raman Spect.. 40:1881-1884.
Wei, PC, Chattopadhyay S, Lin FS, Hsu CM, Jou S, Chen JT, Huang PJ, Chen LC, Chen KH, Shih HC.  2009.  Origin of the anomalous temperature evolution of photoluminescence peak energy in degenerate InN nanocolumns. Opt. Express. 17:11690-11697.