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Chen, TT, Hsieh YP, Wei CM, Chen* YF, Chen LC, Chen KH, Peng YH, Kuan CH.  2008.  Electroluminescence enhancement of SiGe/Si multiple quantum wells through nanowall structures. Nanotechnology. 19:365705.
Chen, HM, Chen CK, Lin CC, Liu RS, Yang H, Chang WS, Chen KH, Chan TS, Lee JF, Tsai DP.  2011.  Multi-bandgap-sensitized ZnO nanorod photoelectrode arrays for water splitting: an X-ray absorption spectroscopy approach for the electronic evolution under solar illumination. J. Phys. Chem. C. 115:21971-21980.
Chen, WC, Lien HT, Cheng TW, Su C, Chong CW, Ganguly A, Chen KH, Chen* LC.  2015.  Side Group of Poly(3-alkylthiophene)s Controlled Dispersion of Single-Walled Carbon Nanotubes for Transparent Conducting Film. ACS Appl. Mater. & Inter. . 7:4616.
Chen, LC, Yang CY, Bhusari DM, Chen KH, Lin MC, Lin JC, Chuang TJ.  1996.  Formation of Crystalline Silicon Carbon Nitride Films by Microwave Plasma-Enhanced CVD. Diamond and Related Materials. 5:514.
Chen, JT, Hsiao CL, Hsu HC, Wu CT, Yeh CL, Wei PC, Chen LC, Chen* KH.  2007.  Epitaxial growth of InN films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source. J. Phys. Chem. A. 111:6755-6759.
Chen, YC, Hsu YK, Lin YG, Lin YK, Horng YY, Chen LC, Chen KH.  2011.  Highly flexible supercapacitors with manganese oxide nanosheet/carbon cloth electrode. Electrochem. Acta. 56:7124-7130.
Chen, WC, Tunuguntla V, Li HW, Chen CY, Li SS, Hwang JS, Lee CH, Chen LC, Chen KH.  2016.  Fabrication of Cu2ZnSnSe4 solar cells through multi-step selenization of layered metallic precursor film. Thin Solid Films .
Chen, KH, Wu JJ, Wen CY, Chen LC, Fan CW, Kuo PF, Chen YF, Huang YS.  1999.  Wide Band Gap Silicon Carbon Nitride Films Deposited by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition. Thin Solid Films. 355-356:205.
Chen, RS, Tsai HY, Huang YS, Chen YT, Chen LC, Chen KH.  2012.  Photoconduction efficiencies in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: acomparison study. Appl. Phys. Lett.. 101:113109.
Chen, KH, Lu CZ, Avilas L, Mazur E, Bloembergen N, Shultz MJ.  1989.  Multiplex Coherent Anti-Stokes Raman Spectroscopy Study of Infrared-multiphoton-excited OCS. J. Chem. Phys.. 91:1462.
Chen, J-C, Hsiao Y-R, Liu Y-C, Chen P-Y, Chen K-H.  2019.  Polybenzimidazoles containing heterocyclic benzo[c]cinnoline structure prepared by sol-gel process and acid doping level adjustment for high temperature PEMFC application, 2019. 182:121814. AbstractWebsite

Polybenzimidazoles containing heterocyclic benzo[c]cinnoline structure are synthesized from 3,8-benzo[c]cinnoline dicarboxylic acid, terephthalic acid and 3,3′-diaminobenzidine. Their membranes are prepared by sol-gel process, involving the conversion of polymer solution in polyphosphoric acid to phosphoric acid. The acid doping levels of the as-prepared membranes increase as the contents of benzo[c]cinnoline increase, indicating good interaction between phosphoric acid and benzo[c]cinnoline structure. The as-prepared membranes with high acid doping levels might lead to the dissolution of membranes in phosphoric acid at temperature higher than 120 °C. A new method is proposed to adjust acid doping levels by immersing the as-prepared membranes in diluted phosphoric acid solutions of various concentrations. The adjusted membranes (acid doping levels around 30 PA RU−1) exhibit enhanced mechanical properties with tensile strength in the range of 4.1–5.2 MPa. The proton conductivity of adjusted membranes maintain at 0.15–0.17 S cm−1 at 160 °C under ambient atmosphere without humidification. The single cells based on the adjusted membranes exhibit open circuit voltages and peak power densities from 0.89 to 0.91 V and 691–1253 mW cm−2 at 160 °C, respectively. Compared to other polybenzimidazole membranes prepared by sol-gel process, the adjusted polybenzimidazoles show higher mechanical strength and better single cell performance.

Chattopadhyay*, S, Chien SC, Chen LC, Chen KH, Lehmann G, Hess P.  2002.  Thermal diffusivity in diamond, SiCxNy and BCxNy. Diamond Relat. Mater. 11:708-713.
Chattopadhyay*, S, Shi SC, Lan ZH, Chen CF, Chen KH, Chen LC.  2005.  Molecular sensing with ultrafine silver crystals on hexagonal aluminum nitridenanorodtemplate. J. Am. Chem. Soc.. 127:2820-2821.
Chattopadhyay*, S, Lo HC, Hsu CH, Chen LC, Chen KH.  2005.  Surface enhanced Raman spectroscopy using self assembled silver nanoparticulates on silicon nanotips. Chem. Mater.. 17:553-559.
Chattopadhyay, S, Chen* LC, Chien SC, Lin ST, Chen KH.  2002.  Bonding characterization, density measurement and thermal diffusivity studies of amorphous silicon carbon nitride and boron carbon nitride thin films. J. Appl. Phys.. 92:5150-5158.
Chattopadhyay, S, Chen LC, Chen KH.  2011.  Energy production and conversion applications ofone-dimensional semiconductor nanostructures. NPG Asia Mater.. 3:74-81.
Chattopadhyay, S, Chen* LC, Wu CT, Chen KH, Wu JS, Chen YF, Lehmann G, Hess P.  2001.  Thermal diffusivity in amorphous silicon carbon nitride thin films by the traveling wave technique. Appl. Phys. Lett.. 79:332-334.
Chattopadhyay, S, Shi SC, Wu CT, Chen LC, Chen CH, Chen* KH.  2006.  Self selected apex angle distribution of the nanotips. Appl. Phys. Lett.. 89:143105-(1-3).
Chattopadhyay, S, Chen* LC, Chien SC, Lin ST, Wu CT, Chen KH.  2002.  Phase and thickness dependence of thermal diffusivity in SiCxNy and BCxNy,. Thin Solid Films. 420:205-211.
Chatterjee, A, Shen CH, Ganguly A, Chen* LC, Hsu CW, Hwang JY, Chen KH.  2004.  Strong room-temperature UV emission of nanocrystalline ZnO films derived from a polymeric solution. Chem. Phys. Lett.. 391:278-282.
Chatterjee, A, Chattopadhyay S, Hsu CW, Shen CH, Chen* LC, Chen CC, Chen KH.  2004.  Growth and characterization of GaN nanowires produced on different sol-gel derived catalyst dispersed in TiO2 and polyvinyl alcohol matrix. J. Mater. Res.. 19:1768-1774.
Chang, CY, Lan TW, Chi GC, Chen* LC, Chen KH, Chen JJ, Jang S, Ren F, Pearton SJ.  2006.  Effect of ozone cleaning and annealing on Ti/Al/Pt/Au ohmic contacts on GaN nanowires. Electrochemical and Solid-State Lett.. 9:G155-G157.
Chang, CY, Pearton* SJ, Huang PJ, G.C. Chi H, Wang T, Chen JJ, Ren F, Chen KH, Chen LC.  2007.  Control of nucleation site density of GaN nanowires. Appl. Surf. Sci.. 253:3196-3200.
Chang, CK, Kataria S, Kuo CC, Ganguli A, Wang BY, Hwang JY, Huang KJ, Yang WH, Wang SB, Chuang CH, Chen M, Huang CI, Pong WF, Song KJ, Chang SJ, Guo J, Tai Y, Tsujimoto M, Isoda S, Chen CW, Chen LC, Chen KH.  2013.  Band gap engineering of chemical vapor deposited graphene by in-situ BN doping. ACS Nano. 7:1333-1341.
Chang, M-C, Ho P-H, Tseng M-F, Lin F-Y, Hou C-H, Lin I-K, Wang H, Huang P-P, Chiang C-H, Yang Y-C, Wang I-T, Du H-Y, Wen C-Y, Shyue J-J, Chen C-W, Chen K-H, Chiu P-W, Chen L-C.  2020.  Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method, 2020. 11(1):3682. AbstractWebsite

Most chemical vapor deposition methods for transition metal dichalcogenides use an extremely small amount of precursor to render large single-crystal flakes, which usually causes low coverage of the materials on the substrate. In this study, a self-capping vapor-liquid-solid reaction is proposed to fabricate large-grain, continuous MoS2 films. An intermediate liquid phase-Na2Mo2O7 is formed through a eutectic reaction of MoO3 and NaF, followed by being sulfurized into MoS2. The as-formed MoS2 seeds function as a capping layer that reduces the nucleation density and promotes lateral growth. By tuning the driving force of the reaction, large mono/bilayer (1.1 mm/200 μm) flakes or full-coverage films (with a record-high average grain size of 450 μm) can be grown on centimeter-scale substrates. The field-effect transistors fabricated from the full-coverage films show high mobility (33 and 49 cm2 V−1 s−1 for the mono and bilayer regions) and on/off ratio (1 ~ 5 × 108) across a 1.5 cm × 1.5 cm region.