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Chen, LC, Wu CT, Wu JJ, Chen KH.  2000.  Growth, characterization, and properties of carbon nitride with and without silicon addition. Int. J. of Modern Phys. B14:333-348.
Chen, TT, Hsieh YP, Wei CM, Chen* YF, Chen LC, Chen KH, Peng YH, Kuan CH.  2008.  Electroluminescence enhancement of SiGe/Si multiple quantum wells through nanowall structures. Nanotechnology. 19:365705.
Chen, HM, Chen CK, Lin CC, Liu RS, Yang H, Chang WS, Chen KH, Chan TS, Lee JF, Tsai DP.  2011.  Multi-bandgap-sensitized ZnO nanorod photoelectrode arrays for water splitting: an X-ray absorption spectroscopy approach for the electronic evolution under solar illumination. J. Phys. Chem. C. 115:21971-21980.
Chen, WC, Lien HT, Cheng TW, Su C, Chong CW, Ganguly A, Chen KH, Chen* LC.  2015.  Side Group of Poly(3-alkylthiophene)s Controlled Dispersion of Single-Walled Carbon Nanotubes for Transparent Conducting Film. ACS Appl. Mater. & Inter. . 7:4616.
Chen, LC, Yang CY, Bhusari DM, Chen KH, Lin MC, Lin JC, Chuang TJ.  1996.  Formation of Crystalline Silicon Carbon Nitride Films by Microwave Plasma-Enhanced CVD. Diamond and Related Materials. 5:514.
Chen, JT, Hsiao CL, Hsu HC, Wu CT, Yeh CL, Wei PC, Chen LC, Chen* KH.  2007.  Epitaxial growth of InN films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source. J. Phys. Chem. A. 111:6755-6759.
Chen, YC, Hsu YK, Lin YG, Lin YK, Horng YY, Chen LC, Chen KH.  2011.  Highly flexible supercapacitors with manganese oxide nanosheet/carbon cloth electrode. Electrochem. Acta. 56:7124-7130.
Chen, WC, Tunuguntla V, Li HW, Chen CY, Li SS, Hwang JS, Lee CH, Chen LC, Chen KH.  2016.  Fabrication of Cu2ZnSnSe4 solar cells through multi-step selenization of layered metallic precursor film. Thin Solid Films .
Chen, KH, Wu JJ, Wen CY, Chen LC, Fan CW, Kuo PF, Chen YF, Huang YS.  1999.  Wide Band Gap Silicon Carbon Nitride Films Deposited by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition. Thin Solid Films. 355-356:205.
Chen, RS, Tsai HY, Huang YS, Chen YT, Chen LC, Chen KH.  2012.  Photoconduction efficiencies in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: acomparison study. Appl. Phys. Lett.. 101:113109.
Chen, KH, Lu CZ, Avilas L, Mazur E, Bloembergen N, Shultz MJ.  1989.  Multiplex Coherent Anti-Stokes Raman Spectroscopy Study of Infrared-multiphoton-excited OCS. J. Chem. Phys.. 91:1462.
Chen, J-C, Hsiao Y-R, Liu Y-C, Chen P-Y, Chen K-H.  2019.  Polybenzimidazoles containing heterocyclic benzo[c]cinnoline structure prepared by sol-gel process and acid doping level adjustment for high temperature PEMFC application, 2019. 182:121814. AbstractWebsite

Polybenzimidazoles containing heterocyclic benzo[c]cinnoline structure are synthesized from 3,8-benzo[c]cinnoline dicarboxylic acid, terephthalic acid and 3,3′-diaminobenzidine. Their membranes are prepared by sol-gel process, involving the conversion of polymer solution in polyphosphoric acid to phosphoric acid. The acid doping levels of the as-prepared membranes increase as the contents of benzo[c]cinnoline increase, indicating good interaction between phosphoric acid and benzo[c]cinnoline structure. The as-prepared membranes with high acid doping levels might lead to the dissolution of membranes in phosphoric acid at temperature higher than 120 °C. A new method is proposed to adjust acid doping levels by immersing the as-prepared membranes in diluted phosphoric acid solutions of various concentrations. The adjusted membranes (acid doping levels around 30 PA RU−1) exhibit enhanced mechanical properties with tensile strength in the range of 4.1–5.2 MPa. The proton conductivity of adjusted membranes maintain at 0.15–0.17 S cm−1 at 160 °C under ambient atmosphere without humidification. The single cells based on the adjusted membranes exhibit open circuit voltages and peak power densities from 0.89 to 0.91 V and 691–1253 mW cm−2 at 160 °C, respectively. Compared to other polybenzimidazole membranes prepared by sol-gel process, the adjusted polybenzimidazoles show higher mechanical strength and better single cell performance.

Chen*, KH, Hsu CH, Lo HC, Chattopadhyay S, Wu CT, Hwang JS, Yang YJ, Chen LC.  2005.  Generally applicable self-masking technique for nanotip array fabrication. Int. J. Nanoscience. 4:879-886.
Chen*, LC, Wen CY, Liang CH, Hong WK, Chen KJ, Cheng HC, Shen CS, Wu CT, Chen KH.  2002.  Controlling steps during early stages of the aligned growth of carbon nanotubes using microwave plasma enhanced chemical vapor deposition. Adv. Fun. Mate. 12:687-692.
Chen*, LC, Hong WK, Tarntair FG, Chen KJ, Lin JB, Kichambare PD, Cheng HC, Chen KH.  2001.  Field electron emission from carbon-based emitters and devices. New Diamond and Frontier Carbon Tech.. 11:249.
Chen*, KH, Wong TS, Wang CT, Chen LC, Ma KJ.  2001.  Carbon nanotubes growth by rapid thermal processing. Diamond and Related Materials. 10:1810-1813.
Chen*, KH, Bhusari DM, Yang JR, Lin ST, Wang TY, Chen LC.  1998.  Highly transparent nano-crystalline diamond films via substrate pretreatment and methane fraction optimization. Thin Solid Films. 332:34-39.
Chen*, CW, Huang CC, Lin YY, Chen LC, Chen KH, Su WF.  2005.  Optical properties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection. Diamond Relat. Mater.. 14:1010-1013.
Chen*, RS, Tsai HY, Chan CH, Huang YS, Chen YT, Chen KH, Chen LC.  2015.  Comparison of CVD- and MBE-grown GaN nanowires: crystallinity, photoluminescence, and photoconductivity. J. Electronic Mater. . 44 :177.
Chen*, LC, Lin HY, Wong CS, Chen KH, Lin ST, Yu YC, Wang CW, Lin EK, Lin KC.  1999.  Ellipsometric study of carbon nitride thin films with and without silicon addition. Diamond & Related Materials. 8:618-622.
Chen*, C-C, Yeh C-C, Chen CH, Yu MY, Liu HL, Wu JJ, Chen KH, Chen LC, Peng JY, Chen YF.  2001.  Catalytic growth and characterization of gallium nitride nanowires. J. Am. Chem. Soc.. 123:2791-2798.
Chen*, LC, Chang SW, Chang CS, Wen CY, Wu J-J, Chen YF, Huang YS, Chen KH.  2001.  Catalyst-free growth of transparent SiCN nanorods. J. Phys. & Chem. of Solids. 62:1567-1576.
Chen*, LC, Hong WK, Tarntair FG, Chen KJ, Lin JB, Kichambare PD, Cheng HC, Chen KH.  2001.  Field electron emission from C-based emitters and devices. New Diamond and Frontier Carbon Technology. 11:249-263.
Chen*, CW, Lee MH, Chen LC, Chen KH.  2004.  Structural and electronic properties of wide band gap silicon carbon nitride materials – afirst principles study. Diamond & Relat. Mater.. 13:1158-1165.
Chen*, CW, Huang CC, Lin YY, Su WF, Chen* LC, Chen KH.  2006.  Photoconductivity and highly selective UV sensing features of amorphous silicon carbon nitride thin films. Appl. Phys. Lett.. 88:073515-(1-3).