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Chen, KH, Bhusari DM, Wu JJ, Wei SL, Liu RL, Chen LC.  1998.  Silicon-containing Crystalline Carbon Nitride: a Novel Wide Band Gap Material. the symposium on Light Emitting Devices for Optoelectronic Applications, Electrochemical Society. :Vol98-2,417-433.
Chen, CW, Chen* KH, Shen CH, Wu JJ, Pong WF, Ganguly A, Chen LC.  2006.  Anomalous energy shift of emission spectra of ZnO nanorods with sizes beyond quantum confinement regime. Appl. Phys. Lett.. 88:241905-(1-3).
Chen, RS, Lu CY, Chen KH, Chen LC.  2009.  Molecule-modulated photoconductivity and gain-amplified selective gas sensing in polar GaN nanowires. Appl. Phys. Lett.. 95:233119.
Chen, J-C, Chen P-Y, Chen H-Y, Chen K-H.  2018.  Analysis and characterization of an atropisomeric ionomer containing quaternary ammonium groups. Polymer. 141:143-153. AbstractWebsite

Polyethersulfone ionomers containing quaternary ammoniums were prepared for the applications on alkaline anion exchange membrane (AAEM) fuel cells. The ionomers were synthesized from 2,2′-dimethyl-4,4′-biphenyldiol and bis(4-chlorophenyl) sulfone via nucleophilic substitution followed by bromination, quaternization and anion exchange reaction. The biphenyl structure in polymer main chain exhibited atropisomerism after bromination, leading to the anisochronous signals of geminal protons on bromomethyl groups in 1H NMR spectra. Model compounds were synthesized to confirm the atropisomerism by EI mass and 1H NMR spectra. The resonance peaks from five possible repeating units of brominated polyethersulfones in the 1H NMR spectra were identified and discussed in detail. The rotational barriers of biphenyl structures containing brominated methyl groups at 2 and 2′ positions were calculated by density functional theory. The properties of these polyethersulfone anion exchange membranes (AEMs) were characterized. Their IECs ranged from 0.81 to 1.75 mequiv/g. The corresponding water uptakes and dimensional changes were in the ranges of 19–42% and 12–38%, respectively. The tensile strength of an AEM (1.75MQAPES-OH) with an IEC of 1.75 mequiv/g remained 17 MPa even though the water uptake was 42%. The hydroxide conductivity of 1.75MQAPES-OH could reach 51.4 mS/cm at 98%RH and 80 °C. After alkaline stability test for 168 h, the AEMs degraded slightly in terms of their IECs and hydroxide conductivity.

Chen, LC, Wang TY, Yang JR, Chen KH, Bhusari DM, Chang YK, Hsieh HH, Pong WF.  2000.  Growth, characterization, optical and X-ray absorption studies of nano-crystalline diamond films. Diamond & Related Materials. 9:877-882.
Chen, CP, Ganguly A, Wang CH, Hsu CW, Hsu YK, Chang YC, Chen* KH, Chen* LC.  2009.  Label-free dual sensing of DNA molecules using GaN nanowires. Anal. Chem.. 81:36-42.
Chen, HY, Chen RS, Rajan NK, Chang FC, Chen LC, Chen KH, Yang YJ, Reed MA.  2011.  Size-dependent persistent photocurrent and surface band bending in m-axial GaN nanowires. Phys. Rev. B. 84:205443.
Chen, KH, Chao CH, Chuang TJ.  1996.  GaN Growth by Nitrogen ECR-CVD Method. MRS Symp. . :Vol.423,377.
Chen, RS, Wang SW, Lan ZH, Tsai JTH, Wu CT, Chen LC, Chen* KH, Huang YS, Chen CC.  2008.  On-chip fabrication of well aligned and contact barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity. Small. 4:925-929.
Chen, KH, Lai YL, Chen LC, Wu JY, Kao FJ.  1995.  High-temperature Raman Study in CVD Diamond. Thin Solid Films. 270:143.
Chen, KJ, Hong WK, Lin JB, Chen LC, Chen KH, Cheng* HC.  2001.  Low turn-on voltage field emission triodes with selective growth of carbon nanotubes. IEEE Electron Device Lett.. 22:516-518.
Chen, RS, Chang HM, Huang* YS, Tsai DS, Chattopadhyay S, Chen KH.  2004.  Growth and characterization of vertically aligned IrO2 nanotubes. J. Crystal Growth. 271:105-112.
Chen, CP, Ganguly A, Chen RS, Fischer W, Chen LC, Chen KH.  2011.  Ultra-sensitive in situ label-free DNA detection using GaN nanowires-based extended-gate field-effect-transistor sensor. Anal. Chem.. 83:1938-1943.
Chen, RS, Wang WC, Chan CH, Lu ML, Chen YF, Lin HC, Chen KH, Chen LC.  2013.  Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires. Nanoscale. 5:6867-6873.
Chen, KH, Lai YL, Lin JC, Song KJ, Chen LC, Huang CY.  1995.  Micro-Raman for Diamond Film Stress Analysis. Diamond and Related Materials. 4:460.
Chen, L, Chen W.  2024.  Applications Of X-ray Techniques To Nanomaterials For Energy Research. : World Scientific Publishing Company AbstractWebsite
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Chen, CH, Chen YF, Lan ZH, Chen LC, Chen KH, Jiang HX, Lin JY.  2004.  Mechanism of enhanced luminescence in InxAlyGa1–x–yN quaternary epilayers. Appl. Phys. Lett.. 84:1480-1482.
Chen, YT, Tsai WC, Chen WY, Hsiao CL, Hsu HC, Chang WH, Hsu TM, Chen KH, Chen LC.  2012.  Growth of sparse arrays of narrow GaNnanorods hosting spectrally stable InGaNquantum disks. Opt. Express. 20:16166-16173.
Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline Silicon Carbon Nitride: A Wide Band Gap Semiconductor. Appl. Phys. Lett.. 72:2463.
Chen, YC, Hsu YK, Lin YG, Chen LC, Chen KH.  2012.  Spontaneous synthesis and electrochemical characterization of nanostructured MnO2 on nitrogen-incorporated carbon nanotubes. Int. J. of Electrochem..
Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline silicon carbon nitride: a wide band gap semiconductor. Appl. Phys. Lett.. 72:2463-2465.
Chen, HY, Chen RS, Chang FC, Chen* LC, Chen KH, Yang YJ.  2009.  Size-dependent photoconductivity and dark conductivity of m-axial GaN nanowires with small critical diameter. Appl. Phys. Lett.. 95:143123.
Chen, LC, Bhusari DM, Yang CY, Chen KH, Chuang TJ, Lin MC, Chen CK, Huang YF.  1997.  Si-Containing Crystalline Carbon Nitride Derived by Microwave Plasma-Enhanced Chemical Vapor Deposition. Thin Solid Film. 303:66-75.
Chen, LC, Wu CT, Wu JJ, Chen KH.  2000.  Growth, characterization, and properties of carbon nitride with and without silicon addition. Int. J. of Modern Phys. B14:333-348.