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Chen, CH, Chen YF, Lan ZH, Chen LC, Chen KH, Jiang HX, Lin JY.  2004.  Mechanism of enhanced luminescence in InxAlyGa1–x–yN quaternary epilayers. Appl. Phys. Lett.. 84:1480-1482.
Chen, YT, Tsai WC, Chen WY, Hsiao CL, Hsu HC, Chang WH, Hsu TM, Chen KH, Chen LC.  2012.  Growth of sparse arrays of narrow GaNnanorods hosting spectrally stable InGaNquantum disks. Opt. Express. 20:16166-16173.
Chen, K-H.  1989.  Spontaneous Raman and Coherent Anti-Stokes Raman Spectroscopy of Infrared Multiphoton Excited Molecules. : Harvard University
Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline Silicon Carbon Nitride: A Wide Band Gap Semiconductor. Appl. Phys. Lett.. 72:2463.
Chen, YC, Hsu YK, Lin YG, Chen LC, Chen KH.  2012.  Spontaneous synthesis and electrochemical characterization of nanostructured MnO2 on nitrogen-incorporated carbon nanotubes. Int. J. of Electrochem..
Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline silicon carbon nitride: a wide band gap semiconductor. Appl. Phys. Lett.. 72:2463-2465.
Chen, HY, Chen RS, Chang FC, Chen* LC, Chen KH, Yang YJ.  2009.  Size-dependent photoconductivity and dark conductivity of m-axial GaN nanowires with small critical diameter. Appl. Phys. Lett.. 95:143123.
Chen, LC, Bhusari DM, Yang CY, Chen KH, Chuang TJ, Lin MC, Chen CK, Huang YF.  1997.  Si-Containing Crystalline Carbon Nitride Derived by Microwave Plasma-Enhanced Chemical Vapor Deposition. Thin Solid Film. 303:66-75.
Chen, TT, Hsieh YP, Wei CM, Chen* YF, Chen LC, Chen KH, Peng YH, Kuan CH.  2008.  Electroluminescence enhancement of SiGe/Si multiple quantum wells through nanowall structures. Nanotechnology. 19:365705.
Chen, HM, Chen CK, Lin CC, Liu RS, Yang H, Chang WS, Chen KH, Chan TS, Lee JF, Tsai DP.  2011.  Multi-bandgap-sensitized ZnO nanorod photoelectrode arrays for water splitting: an X-ray absorption spectroscopy approach for the electronic evolution under solar illumination. J. Phys. Chem. C. 115:21971-21980.
Chen, WC, Lien HT, Cheng TW, Su C, Chong CW, Ganguly A, Chen KH, Chen* LC.  2015.  Side Group of Poly(3-alkylthiophene)s Controlled Dispersion of Single-Walled Carbon Nanotubes for Transparent Conducting Film. ACS Appl. Mater. & Inter. . 7:4616.
Chen, LC, Yang CY, Bhusari DM, Chen KH, Lin MC, Lin JC, Chuang TJ.  1996.  Formation of Crystalline Silicon Carbon Nitride Films by Microwave Plasma-Enhanced CVD. Diamond and Related Materials. 5:514.
Chen, LC, Wu CT, Wu JJ, Chen KH.  2000.  Growth, characterization, and properties of carbon nitride with and without silicon addition. Int. J. of Modern Phys. B14:333-348.
Chen, JT, Hsiao CL, Hsu HC, Wu CT, Yeh CL, Wei PC, Chen LC, Chen* KH.  2007.  Epitaxial growth of InN films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source. J. Phys. Chem. A. 111:6755-6759.
Chen, YC, Hsu YK, Lin YG, Lin YK, Horng YY, Chen LC, Chen KH.  2011.  Highly flexible supercapacitors with manganese oxide nanosheet/carbon cloth electrode. Electrochem. Acta. 56:7124-7130.
Chen, WC, Tunuguntla V, Li HW, Chen CY, Li SS, Hwang JS, Lee CH, Chen LC, Chen KH.  2016.  Fabrication of Cu2ZnSnSe4 solar cells through multi-step selenization of layered metallic precursor film. Thin Solid Films .
Chen, KH, Wu JJ, Wen CY, Chen LC, Fan CW, Kuo PF, Chen YF, Huang YS.  1999.  Wide Band Gap Silicon Carbon Nitride Films Deposited by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition. Thin Solid Films. 355-356:205.
Chen, RS, Tsai HY, Huang YS, Chen YT, Chen LC, Chen KH.  2012.  Photoconduction efficiencies in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: acomparison study. Appl. Phys. Lett.. 101:113109.
Chen, KH, Lu CZ, Avilas L, Mazur E, Bloembergen N, Shultz MJ.  1989.  Multiplex Coherent Anti-Stokes Raman Spectroscopy Study of Infrared-multiphoton-excited OCS. J. Chem. Phys.. 91:1462.
Chen, J-C, Hsiao Y-R, Liu Y-C, Chen P-Y, Chen K-H.  2019.  Polybenzimidazoles containing heterocyclic benzo[c]cinnoline structure prepared by sol-gel process and acid doping level adjustment for high temperature PEMFC application, 2019. 182:121814. AbstractWebsite

Polybenzimidazoles containing heterocyclic benzo[c]cinnoline structure are synthesized from 3,8-benzo[c]cinnoline dicarboxylic acid, terephthalic acid and 3,3′-diaminobenzidine. Their membranes are prepared by sol-gel process, involving the conversion of polymer solution in polyphosphoric acid to phosphoric acid. The acid doping levels of the as-prepared membranes increase as the contents of benzo[c]cinnoline increase, indicating good interaction between phosphoric acid and benzo[c]cinnoline structure. The as-prepared membranes with high acid doping levels might lead to the dissolution of membranes in phosphoric acid at temperature higher than 120 °C. A new method is proposed to adjust acid doping levels by immersing the as-prepared membranes in diluted phosphoric acid solutions of various concentrations. The adjusted membranes (acid doping levels around 30 PA RU−1) exhibit enhanced mechanical properties with tensile strength in the range of 4.1–5.2 MPa. The proton conductivity of adjusted membranes maintain at 0.15–0.17 S cm−1 at 160 °C under ambient atmosphere without humidification. The single cells based on the adjusted membranes exhibit open circuit voltages and peak power densities from 0.89 to 0.91 V and 691–1253 mW cm−2 at 160 °C, respectively. Compared to other polybenzimidazole membranes prepared by sol-gel process, the adjusted polybenzimidazoles show higher mechanical strength and better single cell performance.

Chen, HM, Chen CK, Chang YC, Tsai CW, Liu RS, Hu SF, Chang WS, Chen KH.  2010.  Monolayer-quantum dots sensitized ZnO nanowires-array photoelectrodes: true efficiency for water splitting. Angew. Chem. Int. Ed.. 49:5966-5969.
Chen, KH, Wang J, Mazur E.  1986.  Raman Spectroscopy of Infrared Multiphoton Excited Molecules. Int. Quantum Electronics Conf.. , San Francisco
Chen, LC, Lu TR, Bhusari DM, Wu JJ, Chen KH, Kuo CT, Chen TM.  1998.  The Use of a Bio-molecular Target for Crystalline Carbon Nitride Film Deposition by Ar Ion-Beam Sputtering without Other Source of Nitrogen. Appl. Phys. Lett.. 72:3449.
Chen, RS, Yang TH, Chen HY, Chen* LC, Chen* KH, Yang YJ, Su CH, Lin CR.  2009.  High-gain photoconductivity in semiconducting InN nanowires. Appl. Phys. Lett.. 95:162112.
Chen, LC, Chen CK, Bhusari DM, Chen KH, Wei SL, Chen YF, Jong YC, Lin DY, Li CF, Huang YS.  1997.  Growth of Ternary Silicon Carbon Nitride as a New Wide Band Gap Material. MRS Symp.. :Vol.468,31.