Publications

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Journal Article
Bhusari, DM, Chen CK, Chen KH, Chuang TJ, Chen LC, Lin MC.  1997.  Composition of SiCN Crystals Consisting of a Predominantly Carbon-nitride Network. J. Mater. Res.. 12:322.
Chen, LC, Bhusari DM, Yang CY, Chen KH, Chuang TJ, Lin MC, Chen CK, Huang YF.  1997.  Si-Containing Crystalline Carbon Nitride Derived by Microwave Plasma-Enhanced Chemical Vapor Deposition. Thin Solid Film. 303:66-75.
Lin, DY, Li CF, Huang YS, Jong YC, Chen YF, Chen LC, Chen CK, Chen KH, Bhusari DM.  1997.  Temperature dependence of direct band gap of Si-containing carbon nitride crystalline films. Phys. Rev. B. 56:6498-6501.
Bhusari, DM, Teng CW, Chen KH, Chen LC.  1997.  Traveling wave method for measurement of thermal conductivity of thin films. Rev. Sci. Instrum.. 68(11):4180-4183.
Chen, LC, Yang CY, Bhusari DM, Chen KH, Lin MC, Lin JC, Chuang TJ.  1996.  Formation of Crystalline Silicon Carbon Nitride Films by Microwave Plasma-Enhanced CVD. Diamond and Related Materials. 5:514.
Chen, KH, Chuang MC, Penney M, Banholzer WF.  1992.  Temperature and Density Distribution of H2 and H in Hot Filament CVD of Diamond Films. J. Appl. Phys.. 71:1485.
Bloembergen, N, Chen KH, Lu CZ, Mazur E.  1990.  Multiplex Pure Rotational Coherent Anti-Stokes Raman Spectroscopy in a Molecular Beam. J. Raman Spectroscopy. 21:819.
Chen, KH, Lu CZ, Avilas L, Mazur E, Bloembergen N, Shultz MJ.  1989.  Multiplex Coherent Anti-Stokes Raman Spectroscopy Study of Infrared-multiphoton-excited OCS. J. Chem. Phys.. 91:1462.
Miscellaneous
Krishnamoorthy, V, Bangolla HK, Chen C-Y, Huang Y-T, Cheng C-M, Ulaganathan RK, Sankar R, Lee K-Y, Du H-Y, Chen L-C, Chen K-H, Chen R-S.  2024.  Efficient Hydrogen Evolution Reaction in 2H-MoS2 Basal Planes Enhanced by Surface Electron Accumulation, 2024. Catalysts. 14(1) Abstract

An innovative strategy has been developed to activate the basal planes in molybdenum disulfide (MoS2) to improve their electrocatalytic activity by controlling surface electron accumulation (SEA) through aging, annealing, and nitrogen-plasma treatments. The optimal hydrogen evolution reaction (HER) performance was obtained on the surface treated with nitrogen-plasma for 120 s. An overpotential of 0.20 V and a Tafel slope of 120 mV dec−1 were achieved for the optimized condition. The angle-resolved photoemission spectroscopy measurement confirmed the HER efficiency enhanced by the SEA conjugated with the sulfur vacancy active sites in the MoS2 basal planes. This study provides new insight into optimizing MoS2 catalysts for energy applications.