Sn/Ge(111) surface charge-density-wave phase transition

Citation:
Kidd, TE, Miller T, Chou MY, Chiang TC.  2000.  Sn/Ge(111) surface charge-density-wave phase transition, Oct. Physical Review Letters. 85:3684-3687., Number 17

Abstract:

Angle-resolved photoemission has been utilized to study the surface electronic structure of 1/3 monolayer of Sn on Ge(lll) in both the room-temperature (root3 x root3)R30 degrees phase and the low-temperature (3 x 3) charge-density-wave phase. The results reveal a gap opening around the (3 x 3) Brillouin zone boundary, suggesting a Peierls-like transition despite the well-documented lack of Fermi nesting, a highly sensitive electronic response to doping by intrinsic surface defects is the cause for this unusual behavior, and a detailed calculation illustrates the origin of the (3 x 3) symmetry.

Notes:

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